Comparative study of the interfacial characteristics of sputter-deposited HfO2 on native SiO2/Si (100) using in situ XPS, AES and GIXR

Surface and Interface Analysis

Volumn 38, Issue 4, 2006, Pages 784-788

  Tan, Ruiqin ^a   Azuma, Yasushi ^a   Kojima, Isao ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Auger depth profiling; Grazing incident X ray reflectivity; Hafnium sputtering deposition; In situ X ray photoelectron spectroscopy; Interfacial characteristics

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; HAFNIUM COMPOUNDS; MAGNETRON SPUTTERING; OXIDES; PROFILOMETRY; SILICA; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER DEPTH PROFILING; HAFNIUM SPUTTERING DEPOSITION; IN-SITU X-RAY PHOTOELECTRON SPECTROSCOPY; INTERFACIAL CHARACTERISTICS;

INTERFACES (MATERIALS);

EID: 33646590964     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2263     Document Type: Conference Paper

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