X-ray photoelectron spectroscopic analysis of HfSiON thin films

Surface and Interface Analysis

Volumn 40, Issue 13, 2008, Pages 1701-1704

  Zhang, Lulu ^a   Terauchi, Shin Ya ^a   Azuma, Yasushi ^a   Fujimoto, Toshiyuki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Chemical structure; Crystallization; HfSiON thin film; Rapid thermal anneal (RTA); X ray photoelectron spectroscopy (XPS)

Indexed keywords

ATOMIC PHYSICS; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTALLIZATION; ELECTRON SPECTROSCOPY; ELECTRONS; HAFNIUM; HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCRYSTALLINE ALLOYS; NITRIDES; OXIDATION; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SOLIDS; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; STRUCTURE (COMPOSITION); THIN FILM DEVICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BOND BREAKING; BOND FORMATIONS; CHEMICAL STRUCTURE; HAFNIUM NITRIDES; HFSION THIN FILM; HIGH TEMPERATURE (HT); RAPID THERMAL ANNEAL (RTA); SI ATOMS; TEMPERATURE ANNEALING; THINNER FILM; X-RAY PHOTOELECTRON SPECTROSCOPY (XPS);

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 58449093784     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2901     Document Type: Article

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