Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

Journal of Physics D: Applied Physics

Volumn 40, Issue 17, 2007, Pages 5256-5265

  Martinez F L ^a   Toledano Luque, M ^b   Gandia J J ^c   Carabe J ^c   Bohne, W ^d   Rohrich J ^d   Strub, E ^d   Martil I ^b  

^a TECHNICAL UNIVERSITY OF CARTAGENA   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^c CIEMAT   (Spain)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ENERGY GAP; FILM GROWTH; HAFNIUM COMPOUNDS; NEAR INFRARED SPECTROSCOPY; OPTICAL CONSTANTS; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; REACTIVE SPUTTERING; REFLECTOMETERS; SILICON WAFERS; ULTRAVIOLET VISIBLE SPECTROSCOPY;

HAFNIUM OXIDE; REFLECTANCE SPECTROSCOPY; TAUC LAW; TRANSMITTANCE; UV-GRADE SILICA;

THIN FILMS;

EID: 34548668637     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/17/037     Document Type: Article

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