Nitrogen doping and thermal stability in HfSiO xN y studied by photoemission and x-ray absorption spectroscopy

Applied Physics Letters

Volumn 87, Issue 18, 2005, Pages 1-3

  Toyoda, Satoshi ^a   Okabayashi, Jun ^a   Takahashi, Haruhiko ^a   Oshima, Masaharu ^a   Lee, Dong Ick ^b   Sun, Shiyu ^b   Sun, Steven ^b   Pianetta, Piero A ^b   Ando, Takashi ^c   Fukuda, Seiichi ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL-BONDING STATES; NITROGEN-DOPING EFFECTS; THERMAL INSTABILITY; X-RAY ABSORPTION SPECTROSCOPY;

ABSORPTION; ANNEALING; DOPING (ADDITIVES); NITROGEN; PHOTOEMISSION; THERMODYNAMIC STABILITY; X RAY SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 27344443701     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2126112     Document Type: Article

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