Role of oxygen vacancy in HfO2/SiO2/Si(100) interfaces

Applied Physics Letters

Volumn 88, Issue 19, 2006, Pages

  Cho, Deok Yong ^a   Oh, S J ^a   Chang, Y J ^a   Noh, T W ^a   Jung, Ranju ^b   Lee, Jae Cheol ^b  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; INTERFACES (MATERIALS); OXYGEN; PULSED LASER DEPOSITION; SILICATES; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM COMPOSITION; INTERFACE STATES; OXYGEN VACANCY;

HAFNIUM COMPOUNDS;

EID: 33646711633     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2201050     Document Type: Article

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