Insulated gate III-N heterostructure field-effect transistors

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 1, 2004, Pages 197-224

  Simin, G ^a   Khan, M Asif ^a   Shur, M S ^b   Gaska, R ^c  

^a The Department of Mechanical Engineering   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

III N heterostructures; Insulated gate FETs; MOSHFET

Indexed keywords

ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PARAMETER ESTIMATION; SCHOTTKY BARRIER DIODES;

EPILAYER STRUCTURES; GATE INSULATORS; GATE VOLTAGES;

FIELD EFFECT TRANSISTORS;

EID: 8444232058     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156404002302     Document Type: Article

References (50)

1. M. A. Khan, J. M. Van Hove J. N. Kuznia and D. T. Olsen, High electron mobility GaN-AlGaN heterostructures grown by LPMOCVD, Appl. Phys. Lett. 58, 2408 (1991) and also: M.A. Khan, J. N. Kuznia, J. M. Van Hove N. Pan and N. Carter, Observation of a two-dimensional electron gas in low pressure MOCVD deposited GaN/AlGaN heterojunctions, Appl. Phys. Lett. 60, 3027 (1992)
2. M. A. Khan, J. M. Van Hove J. N. Kuznia and D. T. Olsen, High electron mobility GaN-AlGaN heterostructures grown by LPMOCVD, Appl. Phys. Lett. 58, 2408 (1991) and also: M.A. Khan, J. N. Kuznia, J. M. Van Hove N. Pan and N. Carter, Observation of a two-dimensional electron gas in low pressure MOCVD deposited GaN/AlGaN heterojunctions, Appl. Phys. Lett. 60, 3027 (1992)
3. T. Sheppard, W. L. Pribbk, D.T.Emerson, Z. Ring, R. P. Smith, S. T. Allen, and J. W. Palmour, Device Research Conference Digest (2000) p. 37
4. N.X. Nguyen, M. Micovic, W.-S. Wang, P. Hashimoto, L.-M. McCray, P. Janke and C. Nguyen, Electron. Lett. 36 (2000) p. 468
5. Yi-Feng Wu; Kapolnek, D.; Ibbetson, J.P.; Parikh, P.; Keller, B.P.; Mishra, U.K., Very-high power density AlGaN/GaN HEVTTs, IEEE Trans. ED 48, 586-590 (2001)
6. Wu Lu; Jinwei Yang; Khan, M.A.; Adesida, I. AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise, IEEE Trans. Electron Devices, V. 48, 581-585 (2001)
7. M. Asif Khan, G. Simin, J. Yang, J. Zhang, A. Koudymov, M. S. Shur, R. Gaska, X. Hu, and A. Tarakji, IEEE Trans on MTT- 51, 624-633 (2003)
8. M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, and D. P. Olson, GaN/AlGaN Heterosrructure Deposition by Low Pressure MOCVD for MISFET Devices, Material Research Society Proceedings, vol. 281, p.769 (1993)
9. M. Asif Khan, Michael S. Shur, Q. C. Chen, and J. N. Kuznia, Current-Voltage Characteristic Collapse in AlGaN/GaN Heterostructure Insulated Gate Field Effect Transistors at High Drain Bias, Electronics Letters, Vol. 30, No. 25, p. 2175, Dec. 8, 1994
10. S. C. Binari, L. B. Rowland, G. Kelner, W. Kruppa, H. B. Dietrich, K. Doverspike, D. K. Gaskill, "DC, Microwave, and High-Temperature Characteristics of GaN FET Structures," in Int. Sym. Compound Semiconductors, ed. H. Goronkin (IOP Publishing, Bristol, 1995), p.459
11. 3)/GaN Metal Oxide Semiconductor Field Effect Transistor, Appl. Phys. Lett. 73, 3893 (1998)
12. M. Asif Khan, X. Hu, G. Simin, A. Lunev, and J. Yang, R. Gaska and M. S. Shur, "AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistor", IEEE Electron Device Letters, vol. 21, pp.63-65 (2000)
13. M. Asif Khan, X. Hu, G. Simin, and J. Yang, R. Gaska and M.S. Shur, AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates, Appl. Phys. Lett. v. 77 pp 1339-1341 (2000)
14. M. A. Khan, J.W. Yang, G. Simin, H. zur Loye, R. Bicknell-Tassius, R. Gaska, M. S. Shur, G. Tamulaitis, A. Žukauskas, Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure, physica status solidi (a) 1999, 176, No. 1, 227-230
15. J.B. Webb, H. Tang, S. Rolfe, and J. A. Baedwell, Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy. Appl. Phys. Lett., Vol. 75, No. 7, pp. 953-955 (1999)
16. G. Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur and R. Gaska High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors, physica status solidi a, applied research, Vol. 188; Part 1, pp. 219-222 (2001)
17. A. Koudymov, G. Simin, J. Yang, and M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, and R. Gaska, Maximum Current in Nitride Based Heterostructure Field-Effect Transistors, Appl. Phys. Lett, V. 80 pp. 3216-3218 (2002)
18. M.S. Shur, GaAs Devices and Circuits. Plenum Press, New York and London, 1987
19. M. S. Shur, A. D. Bykhovski, R. Gaska, Two Dimensional Hole Gas Induced by Piezoelectric and Pyroelectric Charges, special issue of Solid-State Electronics, Vol. 44, 205-210 (2000)
20. F. Ren, M. Hong, S. N. G. Chu, and M. A. Marcus, M.J. Schurman, A. Baca, S. J. Pearton and C. R. Abernathy, Effect of Temperature on Ga2O3 (Gd2O3)/GaN Metal Oxide Semiconductor Field Effect Transistor, Appl. Phys. Lett. 73, 3893 (1998)
21. M. S. Shur and M. A. Khan, Optoelectronic GaN-based field effect transistors, in Optoelectronic Materials, Devices, and Integrated Circuits, Proc. SPIE 2397, pp. 294-303, Feb. 7 (1995) (Invited)
22. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, IEEE El. Dev. Lett, 21, 268-270 (2000)
23. L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. R. Shealy. Undoped AlGaN/GaN HEMTs for Microwave Power Amplification. IEEE Trans. ED-48, 479 (2001)
24. X. Hu, A. Koudymov, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur and R. Gaska, Si3N4/AlGaN/GaN- Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors. Appl. Phys. Lett, v.79, p.2832-2834 (2001)
25. V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur and R. Gaska, Submicron Gate Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field - Effect Transistors. IEEE EDL V.24, pp.541-543 (2003)
26. J. Micheal Golio. "Microwave MESFETs and HEMTs", Artech House, Boston, London. ISBN 0-89006-426-1.
27. A. Tarakji, G. Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Zhang, M. Asif Khan, M.S. Shur and R. Gaska, Appl. Phys. Lett., 78, 2169-2171 (2001)
28. C. Nguyen, N.X. Nguyen and D. E. Grider, Electron. Lett, 35, 1380-1382 (1999)
29. E. Kohn, I. Daumiller, P. Schmid, N.X. Nguyen and C.N. Nguyen, El. Lett, 35, 1022 (1999)
30. R. Dietrich, A. Wieszt, A. Vescan, H. Leier, Joan M. Redwing, Karim S. Boutros, K. Komitzer, R. Freitag, T. Ebner and K. Thonke, MRS Internet J. Nitride Semicond. Res. 5, 2, 1-4 (2000).
31. P. B. Klein, S. C. Binari, J. A. Freitas, Jr., and A. E. Wickenden, Journ. Appl. Phys., 88, 2843-2852 (2000).
32. I. Daumiller, D. Theron, C. Gaquiere, A. Vescan, R. Dietrikh, A. Wieszt, H. Leier, B. Vetury, U. K. Mishra, I.P.Smorchkova, S. Keller, N.X. Nguyen, C. Nguyen, E.Kohn, IEEE El. Device Lett., 22, 2, 62-65 (2001)
33. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, IEEE El. Dev. Lett, 21, 268-270 (2000)
34. G. Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur and R. Gaska. Induced Strain Mechanism of Current Collapse in AlGaN/GaN Heterostructure Field-Effect Transistors, Appl. Phys. Lett. 79, 2651-2653 (2001)
35. S. M. Baier, N. C. Cirillo Jr. S. A. Hanka, and M. S. Shur, Gated Transmission Line Model Structure for Characterization of FETs, Jan. 20 (1987), United States Patent # 4,638,341
36. A. Koudymov, G. Simm, M. Asif Khan, A. Tarakji, R. Gaska and M.S. Shur, Dynamic Current-Voltage Characteristics of III-N Heterostructure Field Effect Transistors, to be published in IEEE EDL (2003)
37. M.S. Shur. GaAs Devices and Circuits, Prentice Hall (1987)
38. G. Simin, X. Hu, A. Tarakji, J. Zhang, A. Koudymov, S. Saygi, J. Yang, M. Asif Khan, M. Shur, and R. Gaska, AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor, Jpn. J. Appl. Phys. Vol. 40 No. 11A pp. L 1142 - L 1144 (2002)
39. G. Simin, A. Koudymov, H. Fatima, J. Zhang, J. Yang, M. Asif Khan, X. Hu, A. Tarakji, R. Gaska and M. S. Shur SiO2/AlGaN/InGaN/GaN Metal-Oxide-Semiconductor Double Heterostructure Field - Effect Transistors IEEE EDL, V. 23 N8, 458-460 (2002)
40. G. Simin, A. Koudymov, H. Fatima, Jianping Zhang, Jinwei Yang, M. Asif Khan, X. Hu, A. Tarakji, R. Gaska and M. S. Shur, SiO2/AlGaN/InGaN/GaN MOSDHFETs, IEEE Elctr. Dev. Lett, v 23, N8, pp 458-460 (2002)
41. G. Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar, M. Asif Khan, R. Gaska and M. S. Shur, Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC With Oxide-Bridging. IEEE Electr. Dev. Lett., v 22, N2, PP 53-55 (2001)
42. A. Tarakji, H. Fatima, X. Hu, J-P. Zhang, G. Simin, M. Asif Khan, M. Shur and R. Gaska, Large-Signal Linearity in III-N Metal-Oxide-Semiconductor Double Heterostructure Field-Effect Transistors, IEEE EDL, V.24, 369-371 (2003)
43. R.S. Tucker and C. Rauscher, "Modeling the third-order intermodulation distortion in GaAs FETs," Elect. Lett. Vol. 13, 701-702, (1977).
44. G. Heiter, "Characterization of Nonlinearities in Microwave Devices and Systems," IEEE Trans. Microwave Theory Tech., MTT-21, 797-805 (1973)
45. F. N. Sechi, H. C. Huang, and V. Rigino, "High Efficiency MESFET Linear Amplifier Operating at 4 GHz," International Solid State Circuits Conference, Digest of Technical Papers, pp. 162-163, 1976.
46. H. A. Willing, C. Rauscher, and P. deSantis, "A Technique for Predicting Large-Signal Performance of a GaAs MESFET," IEEE Trans. Microwave Theory Tech., MTT-26, 1013 (1978).
47. K. Lee, M. Shur, T. A. Fjeldly, T. Ytterdal, "Semiconductor Device Modeling for VLSI," Prentice Hall Series in Electronics and VLSI, Englewood Cliffs, New Jersey, 1993.
48. A. Koudymov, G. Simin, M. Ali, X. Hu, J. Yang and M. Asif Khan Low-loss High Power RF Switching using Multigate AlGaN/GaN MOS Heterostructure Field-Effect Transistors, IEEE EDL, V.23 N8, 449-451 (2002)
49. A. Gopinath and J. B. Rankin. "GaAs FET RF Switches". IEEE Transaction on Electron Devices, vol. ED-32, pp.1272-1278, (1985)
50. 2 current switch using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates, Electronics Letters. Vol. 36, pp. 2043-2044, Nov. 2000