Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

IEEE Electron Device Letters

Volumn 23, Issue 8, 2002, Pages 449-451

  Koudymov, Alexei ^b   Hu, Xuhong ^b   Simin, Kirill ^b   Simin, Grigory ^a,b   Ali, Mohammod ^a,b   Yang, Jinwei ^b   Khan, M Asif ^a,b  

^a IEEE   (United States)

^b University of South Carolina   (United States)

Author keywords

Field effect transistor (FET); GaN; HEMT; Heterostructure field effect transistor (HFET); MOSHFET; RF; Switch; Wireless

Indexed keywords

GATE CAPACITANCE;

CAPACITANCE; ELECTRIC BREAKDOWN; EXTRAPOLATION; FIELD EFFECT SEMICONDUCTOR DEVICES; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; IMPEDANCE MATCHING (ELECTRIC); INSERTION LOSSES; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS;

SWITCHING;

EID: 0036687061     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.801301     Document Type: Article

References (11)

1. Low-Iinsertion-loss DP3T MMIC switch for dual-band cellular phones
2. Monolithic transistors SPST switch for L-band
3. A GaAs high power RF single pole dual throw switch IC for digital mobile Communication System
4. GaAs FET RF switches
5. Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems
6. High electron mobility GaN-AlGaN heterostructures grown by LPMOCVD
7. Maximum current in nitride-based heterostructure field effect transistors
8. AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates
9. 2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC Substrates
10. Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging
11. Low-dark current GaAs MSM photodetector