High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 219-222

  Simin, G ^a   Tarakji, A ^b   Hu, X ^a,b   Koudymov, A ^a   Yang, J ^a   Khan, M Asif ^a   Shur, M S ^b   Gaska, R ^b  

^a University of South Carolina   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001671374     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<219::AID-PSSA219>3.0.CO;2-L     Document Type: Article

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