메뉴 건너뛰기




Volumn 110, Issue 5, 2011, Pages

General hypothesis for nanowire synthesis. I. Extended principles and evidential (experimental and theoretical) demonstration

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVE PROPERTIES; BASIC SCIENCE; BIPHASIC STRUCTURE; CATALYTIC AGENTS; DROPLET FORMATION; DROPLET SURFACES; EUTECTIC TEMPERATURE; EXPERIMENTAL EVIDENCE; MULTIPLE NUCLEATION; NANODOTS; NANOWIRE GROWTH; NANOWIRE SYNTHESIS; PRECURSOR DECOMPOSITION; THERMODYNAMIC CONDITIONS; UNIVERSAL MODEL;

EID: 80052944416     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3608127     Document Type: Conference Paper
Times cited : (15)

References (142)
  • 6
    • 77953630343 scopus 로고    scopus 로고
    • 10.1063/1.3311800
    • S. N. Mohammad, J. Appl. Phys. 107, 114304 (2010). 10.1063/1.3311800
    • (2010) J. Appl. Phys. , vol.107 , pp. 114304
    • Mohammad, S.N.1
  • 8
    • 72449201531 scopus 로고    scopus 로고
    • 10.1063/1.3246169
    • S. N. Mohammad, J. Chem. Phys. 131, 224702 (2009). 10.1063/1.3246169
    • (2009) J. Chem. Phys. , vol.131 , pp. 224702
    • Mohammad, S.N.1
  • 12
    • 46749106021 scopus 로고    scopus 로고
    • 10.1021/nl072974w
    • S. N. Mohammad, Nano Lett. 8, 1532 (2008). 10.1021/nl072974w
    • (2008) Nano Lett. , vol.8 , pp. 1532
    • Mohammad, S.N.1
  • 15
    • 22944449642 scopus 로고    scopus 로고
    • For a critical study of the role of catalytic agents in the VLS nanowire growth, see, 10.1002/adma.v17:14
    • For a critical study of the role of catalytic agents in the VLS nanowire growth, see P. Nguyen, H. T. Ng, and M. Meyyappan, Adv. Mater. 17, 1773 (2005). 10.1002/adma.v17:14
    • (2005) Adv. Mater. , vol.17 , pp. 1773
    • Nguyen, P.1    Ng, H.T.2    Meyyappan, M.3
  • 28
    • 70349443106 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.80.085313
    • L. Yu and P. Roca i Cabarrocas, Phys. Rev. B 80, 085313 (2009). 10.1103/PhysRevB.80.085313
    • (2009) Phys. Rev. B , vol.80 , pp. 085313
    • Yu, L.1    Roca Cabarrocas I, P.2
  • 41
    • 32644458380 scopus 로고    scopus 로고
    • 10.1063/1.2166357
    • M. He and S. N. Mohammad, J. Chem. Phys. 124, 064714 (2006). 10.1063/1.2166357
    • (2006) J. Chem. Phys. , vol.124 , pp. 064714
    • He, M.1    Mohammad, S.N.2
  • 42
    • 33748522083 scopus 로고    scopus 로고
    • 10.1063/1.2229195
    • S. N. Mohammad, J. Chem. Phys. 125, 094705 (2006). 10.1063/1.2229195
    • (2006) J. Chem. Phys. , vol.125 , pp. 094705
    • Mohammad, S.N.1
  • 45
    • 37549049331 scopus 로고    scopus 로고
    • 10.1063/1.2813432
    • S. N. Mohammad, J. Chem. Phys. 127, 244702 (2007). 10.1063/1.2813432
    • (2007) J. Chem. Phys. , vol.127 , pp. 244702
    • Mohammad, S.N.1
  • 50
    • 34247326514 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.75.165413
    • C. C. Yang and S. Li, Phys. Rev. B 75, 165413 (2007). 10.1103/PhysRevB.75.165413
    • (2007) Phys. Rev. B , vol.75 , pp. 165413
    • Yang, C.C.1    Li, S.2
  • 55
    • 80052930213 scopus 로고    scopus 로고
    • L species
    • L species.
  • 56
  • 58
    • 33645620497 scopus 로고
    • 10.1103/PhysRevA.13.2287
    • P. Buffat and J. P. Borel, Phys. Rev. A 13, 2287 (1976); 10.1103/PhysRevA.13.2287
    • (1976) Phys. Rev. A , vol.13 , pp. 2287
    • Buffat, P.1    Borel, J.P.2
  • 62
    • 23844441209 scopus 로고    scopus 로고
    • 10.1126/science.1116597
    • P. N. Pusey, Science 309, 1198 (2005). 10.1126/science.1116597
    • (2005) Science , vol.309 , pp. 1198
    • Pusey, P.N.1
  • 65
    • 0026765635 scopus 로고
    • See also, ;employing Auger electron spectroscopy, X-ray photoelectron spectroscopy profiling, Rutherford backscattering spectrometry, and scanning electron microscopy, these authors found that inhomogeneous reaction at the metal/semiconductor interface gives rise to the formation of holes, cracks, and particles, and that this reaction leads ultimately to an interface melting. 10.1557/mrs2004.266
    • See also, E. J. Petit and R. Caudano, Appl. Surf. Sci. 54, 405 (1992);employing Auger electron spectroscopy, X-ray photoelectron spectroscopy profiling, Rutherford backscattering spectrometry, and scanning electron microscopy, these authors found that inhomogeneous reaction at the metal/semiconductor interface gives rise to the formation of holes, cracks, and particles, and that this reaction leads ultimately to an interface melting. 10.1557/mrs2004.266
    • (1992) Appl. Surf. Sci. , vol.54 , pp. 405
    • Petit, E.J.1    Caudano, R.2
  • 71
    • 27944495968 scopus 로고    scopus 로고
    • 2;see, 10.1088/0957-4484/16/12/029
    • 2;see P. Mohan, J. Motohisa, and T. Fukui, Nanotechnology 16, 2903 (2005). 10.1088/0957-4484/16/12/ 029
    • (2005) Nanotechnology , vol.16 , pp. 2903
    • Mohan, P.1    Motohisa, J.2    Fukui, T.3
  • 91
    • 79953861732 scopus 로고    scopus 로고
    • The Au/Si eutectic temperature is about 363 C. Yet, Au-mediated vapor-phase growth of SiC nanowires by these authors took place at 1100 C. 10.1021/cg101405u
    • B. Krishnan, R. V. K. G. Thirumalai, Y. Kosha, S. Sundaresan, I. Levin, A. V. Davydov, and J. N. Merrett, Cryst. Growth Design 11, 538 (2011). The Au/Si eutectic temperature is about 363 C. Yet, Au-mediated vapor-phase growth of SiC nanowires by these authors took place at 1100 C. 10.1021/cg101405u
    • (2011) Cryst. Growth Design , vol.11 , pp. 538
    • Krishnan, B.1    Thirumalai, R.V.K.G.2    Kosha, Y.3    Sundaresan, S.4    Levin, I.5    Davydov, A.V.6    Merrett, J.N.7
  • 92
    • 0034829607 scopus 로고    scopus 로고
    • 10.1021/ja0059084
    • Y. Wu and P. Yang, J. Am. Chem. Soc. 123, 3165 (2001). 10.1021/ja0059084
    • (2001) J. Am. Chem. Soc. , vol.123 , pp. 3165
    • Wu, Y.1    Yang, P.2
  • 96
    • 77957726198 scopus 로고    scopus 로고
    • 10.1063/1.3474650
    • S. N. Mohammad, J. Appl. Phys. 108, 064323 (2010). 10.1063/1.3474650
    • (2010) J. Appl. Phys. , vol.108 , pp. 064323
    • Mohammad, S.N.1
  • 105
    • 58149267806 scopus 로고    scopus 로고
    • 10.1088/0957-4484/19/49/495603
    • M. C. Plante and R. R. LaPierre, Nanotechnology 19, 495603 (2008). 10.1088/0957-4484/19/49/495603
    • (2008) Nanotechnology , vol.19 , pp. 495603
    • Plante, M.C.1    Lapierre, R.R.2
  • 132
  • 137
    • 0037113132 scopus 로고    scopus 로고
    • 10.1023/A:1020904317133
    • W. H. Qi, J. Mater. Sci. Lett. 21, 1743 (2002). 10.1023/A:1020904317133
    • (2002) J. Mater. Sci. Lett. , vol.21 , pp. 1743
    • Qi, W.H.1
  • 141
    • 0019069946 scopus 로고
    • 10.1016/0001-6160(80)90002-4
    • J. W. Cahn, Acta Metall. 28, 1333 (1980). 10.1016/0001-6160(80)90002-4
    • (1980) Acta Metall. , vol.28 , pp. 1333
    • Cahn, J.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.