Phase separations of single-crystal nanowires grown by self-catalytic chemical vapor deposition method

Journal of Chemical Physics

Volumn 126, Issue 6, 2007, Pages

  He, Maoqi ^a   Motayed, Abhishek ^b,c   Noor Mohammad, S ^c,d,e  

^a HOWARD UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

^d Howard University   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRES; SINGLE-CRYSTAL III-V NITRIDE;

CATALYSIS; CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PHASE SEPARATION; PHASE TRANSITIONS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

SINGLE CRYSTALS;

EID: 33847011335     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2432111     Document Type: Article

References (24)

1. For a review of nanowire science and technology, see Y. N. Xia, P. Yang, Y. G. Sun, Y. Y. Wu, and B. Meyers, Adv. Mater. (Weinheim, Ger.) 15, 353 (2003); see also Quantum Semiconductor Structures, edited by, C. Weisbuch, and, B. Vinter, (Academic, Boston, MA, 1991).
2. For a review of nanowire science and technology, see Y. N. Xia, P. Yang, Y. G. Sun, Y. Y. Wu, and B. Meyers, Adv. Mater. (Weinheim, Ger.) 15, 353 (2003); see also Quantum Semiconductor Structures, edited by, C. Weisbuch, and, B. Vinter, (Academic, Boston, MA, 1991).
3. X. H. Wu, X. Mei, D. Kim, M. Blumin, H. E. Ruda, J. Q. Liu, and K. L. Kavanagh, Appl. Phys. Lett. 83, 3368 (2003).
4. S. Vaddiraju, A. Mohite, A. Chin, M. Meyyappan, G. Sumanasekera, B. W. Alphenaar, and M. K. Sunkara, Nano Lett. 5, 1625 (2005).
5. K. A. Bertness, A. Roshko, N. A. Sanford, J. M. Barker, and A. V. Davydov, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2005.11.079 287, 522 (2006); K. A. Bertness, N. A. Sanford, J. M. Barker, J. B. Schlager, A. Roshko, A. V. Davydov, and I. Levin, J. Electron. Mater. 35, 576 (2006).
6. K. A. Bertness, A. Roshko, N. A. Sanford, J. M. Barker, and A. V. Davydov, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2005.11.079 287, 522 (2006); K. A. Bertness, N. A. Sanford, J. M. Barker, J. B. Schlager, A. Roshko, A. V. Davydov, and I. Levin, J. Electron. Mater. 35, 576 (2006).
7. For an extensive discussion of the kinetics of the substrate-free, contamination-free, self-catalytic CVD growth method used to grow the present nanowires, see S. N. Mohammad, J. Chem. Phys. 125, 094705 (2006).
8. M. He and S. N. Mohammad, J. Chem. Phys. 124, 064714 (2006).
9. M. He, P. Zhou, S. N. Mohammad, G. Harris, J. B. Halpern, R. Jacobs, W. L. Sarney, and L. Salamanca-Riba, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(01)01466-X 231, 357 (2001); see also M. He, I. Minus, P. Zhou, and S. N. Mohammad, Appl. Phys. Lett. 77, 3731 (2000).
10. M. He, P. Zhou, S. N. Mohammad, G. Harris, J. B. Halpern, R. Jacobs, W. L. Sarney, and L. Salamanca-Riba, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(01)01466-X 231, 357 (2001); see also M. He, I. Minus, P. Zhou, and S. N. Mohammad, Appl. Phys. Lett. 77, 3731 (2000).
11. M. He, M. M. E. Fahmi, S. N. Mohammad, R. N. Jacobs, L. Salamanca-Riba, F. Felt, M. Jah, A. Sharma, and D. Lakins, Appl. Phys. Lett. 82, 3749 (2003).
12. A. M. Sayed ElAhl, M. He, S. N. Mohammad, J. Appl. Phys. 94, 7749 (2003).
13. R. N. Jacobs, L. Salamanca-Riba, M. He, S. N. Mohammad, and J. B. Halpern, Mater. Res. Soc. Symp. Proc. 0272-9172 675, W.9.4.1 (2001); A. Motayed, A. V. Davydov, M. D. Vaudin, I. Levin, J. Melngailis, and S. N. Mohammad, J. Appl. Phys. 0021-8979 10.1063/1.2215354 100, 024306 (2006); A. Motayed, M. He, A. V. Davydov, J. Melngailis, and S. N. Mohammad, J. Appl. Phys. 100, 114310 (2006).
14. R. N. Jacobs, L. Salamanca-Riba, M. He, S. N. Mohammad, and J. B. Halpern, Mater. Res. Soc. Symp. Proc. 0272-9172 675, W.9.4.1 (2001); A. Motayed, A. V. Davydov, M. D. Vaudin, I. Levin, J. Melngailis, and S. N. Mohammad, J. Appl. Phys. 0021-8979 10.1063/1.2215354 100, 024306 (2006); A. Motayed, M. He, A. V. Davydov, J. Melngailis, and S. N. Mohammad, J. Appl. Phys. 100, 114310 (2006).
15. R. N. Jacobs, L. Salamanca-Riba, M. He, S. N. Mohammad, and J. B. Halpern, Mater. Res. Soc. Symp. Proc. 0272-9172 675, W.9.4.1 (2001); A. Motayed, A. V. Davydov, M. D. Vaudin, I. Levin, J. Melngailis, and S. N. Mohammad, J. Appl. Phys. 0021-8979 10.1063/1.2215354 100, 024306 (2006); A. Motayed, M. He, A. V. Davydov, J. Melngailis, and S. N. Mohammad, J. Appl. Phys. 100, 114310 (2006).
16. W. W. Mullins and R. F. Sekerka, J. Appl. Phys. 0021-8979 10.1063/1.1702607 34, 323 (1963); W. W. Mullins and R. F. Sekerka, J. Appl. Phys. 0021-8979 10.1063/1.1713333 35, 444 (1964); R. F. Mulllins, J. Appl. Phys. 0021-8979 10.1063/1.1713887 36, 264 (1965); A. A. Rigos and J. M. Deutsch, J. Chem. Phys. 88, 7119 (1987).
17. W. W. Mullins and R. F. Sekerka, J. Appl. Phys. 0021-8979 10.1063/1.1702607 34, 323 (1963); W. W. Mullins and R. F. Sekerka, J. Appl. Phys. 0021-8979 10.1063/1.1713333 35, 444 (1964); R. F. Mulllins, J. Appl. Phys. 0021-8979 10.1063/1.1713887 36, 264 (1965); A. A. Rigos and J. M. Deutsch, J. Chem. Phys. 88, 7119 (1987).
18. W. W. Mullins and R. F. Sekerka, J. Appl. Phys. 0021-8979 10.1063/1.1702607 34, 323 (1963); W. W. Mullins and R. F. Sekerka, J. Appl. Phys. 0021-8979 10.1063/1.1713333 35, 444 (1964); R. F. Mulllins, J. Appl. Phys. 0021-8979 10.1063/1.1713887 36, 264 (1965); A. A. Rigos and J. M. Deutsch, J. Chem. Phys. 88, 7119 (1987).
19. W. W. Mullins and R. F. Sekerka, J. Appl. Phys. 0021-8979 10.1063/1.1702607 34, 323 (1963); W. W. Mullins and R. F. Sekerka, J. Appl. Phys. 0021-8979 10.1063/1.1713333 35, 444 (1964); R. F. Mulllins, J. Appl. Phys. 0021-8979 10.1063/1.1713887 36, 264 (1965); A. A. Rigos and J. M. Deutsch, J. Chem. Phys. 88, 7119 (1987).
20. A. Thess, Science 272, 483 (1996).
21. A. Zoroddu, F. Bernardini, P. Ruggerone, and V. Fiorentini, Phys. Rev. B 64, 045208 (2001).
22. B. W. Jacobs, V. M. Ayers, M. A. Crimp, J. Zhang, D. Liu, H. C. Shaw, J. B. Halpern, and Maoqi He (unpublished).
23. K. Hiruma, M. Yazawa, T. Katsuyama, K. Ogawa, K. Haraguchi, M. Koguchi, and H. Kakibayashi, J. Appl. Phys. Rev. 77, 447 (1995);
24. see also M. Koguchi, K. Kakibayashi, M. Yazawa, K. Hiruma, and T. Katsuyama, Jpn. J. Appl. Phys., Part 1 31, 2061 (1992).