Growth and structure of chemically vapor deposited Ge nanowires on Si substrates

Nano Letters

Volumn 4, Issue 3, 2004, Pages 503-506

  Kamins, T I ^a   Li, X ^a   Williams, R Stanley ^a   Liu, X ^b,c  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b STANFORD UNIVERSITY   (United States)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; CATALYSIS; CATALYST; CHEMICAL STRUCTURE; ELECTRONICS; NANOPARTICLE; PROBABILITY; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR;

EID: 1642487736     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl035166n     Document Type: Article

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