Diameter-dependent electromechanical properties of GaN nanowires

Nano Letters

Volumn 6, Issue 2, 2006, Pages 153-158

  Nam, Chang Yong ^a   Jaroenapibal, Papot ^a   Tham, Douglas ^a   Luzzi, David E ^a   Evoy, Stephane ^b   Fischer, John E ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMECHANICAL PROPERTIES; ELECTROMECHANICAL RESONANCE ANALYSIS; GAN NANOWIRES;

ELECTROMECHANICAL DEVICES; GALLIUM NITRIDE; RESONANCE; RESONATORS; SILICON; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

GALLIUM; GALLIUM NITRIDE; NANOTUBE;

ARTICLE; CHEMISTRY; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SENSITIVITY AND SPECIFICITY; SURFACE PROPERTY; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM; MICROSCOPY, ELECTRON, TRANSMISSION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SENSITIVITY AND SPECIFICITY; SURFACE PROPERTIES;

EID: 33644899451     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl051860m     Document Type: Article

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