On the non-monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 7, 2004, Pages

  Dubrovskii, V G ^a   Soshnikov, I P ^a   Cirlin, G E ^b   Tonkikh, A A ^a   Samsonenko, Yu B ^b   Sibirev, N V ^b   Ustinov, V M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4644305022     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200409042     Document Type: Article

References (7)

1. K. Hiruma et al., Appl. Phys. 77, 447 (1995).
2. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
3. D. N. Mcllroy et al., J. Phys.: Condens. Matter 16, R415 (2004).
4. E. I. Givargizov and A. A. Chernov, Crystallography 18, 147 (1973).
5. D. T. J. Hurle (Ed.), Handbook of Crystal Growth, Vol. 2: Bulk Crystal Growth (Elsevier, North-Holland, 1994).
6. V. G. Dubrovskii and N. V. Sibirev, Phys. Rev. E, submitted.
7. S. A. Kukushkin and A. V. Osipov, Prog. Surf. Sci. 51, 1 (1996).