Analysis of silicon nanowires grown by combining SiO evaporation with the VLS mechanism

Journal of the Electrochemical Society

Volumn 151, Issue 7, 2004, Pages

  Kolb, F M ^a   Hofmeister, H ^a   Scholz, R ^a   Zacharias, M ^a   Gosele U ^a   Ma, D D ^a,b   Lee, S T ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CHEMICAL VAPOR DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; FOURIER TRANSFORMS; INERT GASES; OXIDES; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

NANOSCALE DEVICES; NANOWIRE SILICON CORES; SILICON NANOWIRES; VLS MECHANISM;

SEMICONDUCTING SILICON;

EID: 3242688215     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1759365     Document Type: Article

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