Growth phenomena of Si and Si/Ge nanowires on Si (1 1 1) by molecular beam epitaxy

Journal of Crystal Growth

Volumn 290, Issue 1, 2006, Pages 6-10

  Zakharov, N D ^a   Werner, P ^a   Gerth, G ^a   Schubert, L ^a   Sokolov, L ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Semiconducting silicon compounds

Indexed keywords

GERMANIUM; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SILICON; THERMODYNAMICS;

ELASTIC ENERGY; GROWTH RATE; VAPOR-LIQUID-SOLID MECHANISM (VLS);

SEMICONDUCTOR GROWTH;

EID: 33645027610     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.096     Document Type: Article

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