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Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 10-20

SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition

(7) Hartmann, J M a Loup, V a Rolland, G a Holliger, P a Laugier, F a Vannuffel, C a Semeria M N a

a CEA LETI (France)

Author keywords

A1. Doping; A1. Growth models; A3. Chemical vapor deposition processes; B1. Germanium silicon compounds

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; GROWTH KINETICS; NUCLEATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILANES;

DICHLOROSILANE CHEMISTRIES;

SEMICONDUCTOR GROWTH;

EID: 0036498730 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02085-1 Document Type: Article

Times cited : (93)

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