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Physical Review Letters

Volumn 96, Issue 9, 2006, Pages

Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires

(4) Kodambaka, S a Tersoff, J a Reuter, M C a Ross, F M a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AU-CATALYZED GROWTH; CATALYST SURFACE; SI NANOWIRES; VAPOR-LIQUID-SOLID GROWTH;

ADSORPTION; CRYSTAL GROWTH; REAL TIME SYSTEMS; SEMICONDUCTOR QUANTUM WIRES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 33644911816 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.96.096105 Document Type: Article

Times cited : (255)

References (39)

1
- 36449000249
- APPLAB 0003-6951 10.1063/1.106556
- K. Haraguchi, Appl. Phys. Lett. 60, 745 (1992); APPLAB 0003-6951 10.1063/1.106556
- (1992) Appl. Phys. Lett. , vol.60 , pp. 745
- Haraguchi, K.¹

2
- 0035804248
- NATUAS 0028-0836 10.1038/35051047
- X. Duan, Nature (London) NATUAS 0028-0836 409, 66 (2001); 10.1038/35051047
- (2001) Nature (London) , vol.409 , pp. 66
- Duan, X.¹

3
- 0037033988
- NATUAS 0028-0836 10.1038/415617a
- M.S. Gudiksen, Nature (London) NATUAS 0028-0836 415, 617 (2002); 10.1038/415617a
- (2002) Nature (London) , vol.415 , pp. 617
- Gudiksen, M.S.¹

4
- 0035793378
- SCIEAS 0036-8075 10.1126/science.291.5505.851
- Y. Cui and C.M. Lieber, Science 291, 851 (2001); SCIEAS 0036-8075 10.1126/science.291.5505.851
- (2001) Science , vol.291 , pp. 851
- Cui, Y.¹ Lieber, C.M.²

5
- 0035902938
- SCIEAS 0036-8075 10.1126/science.1062711
- Y. Cui, Science 293, 1289 (2001); SCIEAS 0036-8075 10.1126/science. 1062711
- (2001) Science , vol.293 , pp. 1289
- Cui, Y.¹

6
- 0035943358
- SCIEAS 0036-8075 10.1126/science.1062340
- J. Wang, Science 293, 1455 (2001); SCIEAS 0036-8075 10.1126/science. 1062340
- (2001) Science , vol.293 , pp. 1455
- Wang, J.¹

7
- 0035834415
- SCIEAS 0036-8075 10.1126/science.1066192
- Y. Huang, Science 294, 1313 (2001); SCIEAS 0036-8075 10.1126/science. 1066192
- (2001) Science , vol.294 , pp. 1313
- Huang, Y.¹

8
- 0037011472
- APPLAB 0003-6951 10.1063/1.1527995
- M.T. Bjork, Appl. Phys. Lett. 81, 4458 (2002); APPLAB 0003-6951 10.1063/1.1527995
- (2002) Appl. Phys. Lett. , vol.81 , pp. 4458
- Bjork, M.T.¹

9
- 4644254081
- NALEFD 1530-6984 10.1021/nl049230s
- M.T. Bjork, Nano Lett. NALEFD 1530-6984 4, 1621 (2004); 10.1021/nl049230s
- (2004) Nano Lett. , vol.4 , pp. 1621
- Bjork, M.T.¹

10
- 0042769310
- APPLAB 0003-6951 10.1063/1.1590426
- S. De Franceschi, Appl. Phys. Lett. 83, 344 (2003); APPLAB 0003-6951 10.1063/1.1590426
- (2003) Appl. Phys. Lett. , vol.83 , pp. 344
- De Franceschi, S.¹

11
- 0042769310
- APPLAB 0003-6951 10.1063/1.1590426
- S. De Franceschi, Appl. Phys. Lett. 83, 344 (2003); APPLAB 0003-6951 10.1063/1.1590426
- (2003) Appl. Phys. Lett. , vol.83 , pp. 344
- De Franceschi, S.¹

12
- 4644280413
- NALEFD 1530-6984 10.1021/nl049401t
- L. Gangloff, Nano Lett. NALEFD 1530-6984 4, 1575 (2004). 10.1021/nl049401t
- (2004) Nano Lett. , vol.4 , pp. 1575
- Gangloff, L.¹

13
- 33751122778
- APPLAB 0003-6951 10.1063/1.1753975
- R.S. Wagner and W.C. Ellis, Appl. Phys. Lett. 4, 89 (1964); APPLAB 0003-6951 10.1063/1.1753975
- (1964) Appl. Phys. Lett. , vol.4 , pp. 89
- Wagner, R.S.¹ Ellis, W.C.²

14
- 36849118041
- JAPIAU 0021-8979 10.1063/1.1713143
- R.S. Wagner, J. Appl. Phys. 35, 2993 (1964); JAPIAU 0021-8979 10.1063/1.1713143
- (1964) J. Appl. Phys. , vol.35 , pp. 2993
- Wagner, R.S.¹

15
- 36849100139
- JAPIAU 0021-8979 10.1063/1.1709722
- R.S. Wagner, J. Appl. Phys. 38, 1554 (1967); JAPIAU 0021-8979 10.1063/1.1709722
- (1967) J. Appl. Phys. , vol.38 , pp. 1554
- Wagner, R.S.¹

16
- 0009643505
- JESOAN 0013-4651
- R.S. Wagner and C.J. Doherty, J. Electrochem. Soc. 113, 1300 (1966); JESOAN 0013-4651
- (1966) J. Electrochem. Soc. , vol.113 , pp. 1300
- Wagner, R.S.¹ Doherty, C.J.²

17
- 33751574532
- JESOAN 0013-4651
- R.S. Wagner C.J. Doherty J. Electrochem. Soc. 115, 93 (1968); JESOAN 0013-4651
- (1968) J. Electrochem. Soc. , vol.115 , pp. 93
- Wagner, R.S.¹ Doherty, C.J.²

18
- 0004147868
- Pergamon, Oxford and New York
- R.S. Wagner in Crystal Growth (Pergamon, Oxford and New York, 1967) p. 347.
- (1967) Crystal Growth , pp. 347
- Wagner, R.S.¹

19
- 49649159403
- JCRGAE 0022-0248 10.1016/0022-0248(71)90188-6
- G.A. Bootsma and H.J. Gassen, J. Cryst. Growth JCRGAE 0022-0248 10, 223 (1971). 10.1016/0022-0248(71)90188-6
- (1971) J. Cryst. Growth , vol.10 , pp. 223
- Bootsma, G.A.¹ Gassen, H.J.²

20
- 0346782277
- JCRGAE 0022-0248 10.1016/0022-0248(71)90250-8
- E.I. Givargizov and N.N. Sheftal, J. Cryst. Growth JCRGAE 0022-0248 9, 326 (1971); 10.1016/0022-0248(71)90250-8
- (1971) J. Cryst. Growth , vol.9 , pp. 326
- Givargizov, E.I.¹ Sheftal, N.N.²

21
- 0041554510
- SPHCA6 0038-5638
- E.I. Givargizov and A.A. Chernov, Sov. Phys. Crystallogr. 18, 89 (1973); SPHCA6 0038-5638
- (1973) Sov. Phys. Crystallogr. , vol.18 , pp. 89
- Givargizov, E.I.¹ Chernov, A.A.²

22
- 0010911965
- JCRGAE 0022-0248 10.1016/0022-0248(75)90105-0
- E.I. Givargizov, J. Cryst. Growth JCRGAE 0022-0248 31, 20 (1975). 10.1016/0022-0248(75)90105-0
- (1975) J. Cryst. Growth , vol.31 , pp. 20
- Givargizov, E.I.¹

23
- 17944376542
- APPLAB 0003-6951 10.1063/1.1888034
- J. Kikkawa, Y. Ohno, and S. Takeda, Appl. Phys. Lett. 86, 123109 (2005). APPLAB 0003-6951 10.1063/1.1888034
- (2005) Appl. Phys. Lett. , vol.86 , pp. 123109
- Kikkawa, J.¹ Ohno, Y.² Takeda, S.³

24
- 3042816929
- APPLAB 0003-6951 10.1063/1.1762701
- L. Schubert, Appl. Phys. Lett. 84, 4968 (2004). APPLAB 0003-6951 10.1063/1.1762701
- (2004) Appl. Phys. Lett. , vol.84 , pp. 4968
- Schubert, L.¹

25
- 0141744923
- NALEFD 1530-6984 10.1021/nl034222h
- E.A. Stach, Nano Lett. 3, 867 (2003); NALEFD 1530-6984 10.1021/nl034222h
- (2003) Nano Lett. , vol.3 , pp. 867
- Stach, E.A.¹

26
- 0034829607
- JACSAT 0002-7863 10.1021/ja0059084
- Y. Wu and P. Yang, J. Am. Chem. Soc. 123, 3165 (2001); JACSAT 0002-7863 10.1021/ja0059084
- (2001) J. Am. Chem. Soc. , vol.123 , pp. 3165
- Wu, Y.¹ Yang, P.²

27
- 33644898437
- MRSPDH 0272-9172
- G. Zhou, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 737, F6.3.1 (2003).
- (2003) Mater. Res. Soc. Symp. Proc. , vol.737 , pp. 631
- Zhou, G.¹

28
- 33644780780
- NATUAS 0028-0836 10.1038/nature04574
- J.B. Hannon, S. Kodambaka, F.M. Ross, and R.M. Tromp, Nature (London) 440, 69 (2006). NATUAS 0028-0836 10.1038/nature04574
- (2006) Nature (London) , vol.440 , pp. 69
- Hannon, J.B.¹ Kodambaka, S.² Ross, F.M.³ Tromp, R.M.⁴

29
- 0030126448
- SUSCAS 0039-6028 10.1016/0039-6028(95)01068-8
- M. Hammar, Surf. Sci. 349, 129 (1996). SUSCAS 0039-6028 10.1016/0039-6028(95)01068-8
- (1996) Surf. Sci. , vol.349 , pp. 129
- Hammar, M.¹

30
- 28844484557
- PRLTAO 0031-9007 10.1103/PhysRevLett.95.146104
- F.M. Ross, J. Tersoff, and M.C. Reuter, Phys. Rev. Lett. 95, 146104 (2005). PRLTAO 0031-9007 10.1103/PhysRevLett.95.146104
- (2005) Phys. Rev. Lett. , vol.95 , pp. 146104
- Ross, F.M.¹ Tersoff, J.² Reuter, M.C.³

31
- 11044230455
- JAPIAU 0021-8979 10.1063/1.1815051
- J.W. Dailey, J. Appl. Phys. 96, 7556 (2004). JAPIAU 0021-8979 10.1063/1.1815051
- (2004) J. Appl. Phys. , vol.96 , pp. 7556
- Dailey, J.W.¹

32
- 0037948794
- JCRGAE 0022-0248
- K.-K. Lew and J.M. Redwing, J. Cryst. Growth JCRGAE 0022-0248 254, 14 (2003).
- (2003) J. Cryst. Growth , vol.254 , pp. 14
- Lew, K.-K.¹ Redwing, J.M.²

33
- 0001337564
- JCPSA6 0021-9606 10.1063/1.458501
- K. Sinniah, J. Chem. Phys. 92, 5700 (1990); JCPSA6 0021-9606 10.1063/1.458501
- (1990) J. Chem. Phys. , vol.92 , pp. 5700
- Sinniah, K.¹

34
- 0001305042
- JAPIAU 0021-8979 10.1063/1.357712
- T.R. Bramblett, J. Appl. Phys. 76, 1884 (1994). JAPIAU 0021-8979 10.1063/1.357712
- (1994) J. Appl. Phys. , vol.76 , pp. 1884
- Bramblett, T.R.¹

35
- 0000645807
- APPLAB 0003-6951 10.1063/1.121812
- In principle, droplet curvature could also affect the transition-state energy; see J. Tersoff, Y. Tu, and G. Grinstein, Appl. Phys. Lett. 73, 2328 (1998). Similarly, changes in droplet composition could affect the transition state. But these effects can have either sign, and are presumed to be negligible. APPLAB 0003-6951 10.1063/1.121812
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2328
- Tersoff, J.¹ Tu, Y.² Grinstein, G.³

36
- 0000763830
- AMETAR 0001-6160 10.1016/0001-6160(55)90041-9
- G.W. Sears, Acta Metall. 3, 361 (1955); AMETAR 0001-6160 10.1016/0001-6160(55)90041-9
- (1955) Acta Metall. , vol.3 , pp. 361
- Sears, G.W.¹

37
- 0000122810
- JCPSA6 0021-9606 10.1063/1.1701338
- J.M. Blakely and K.A. Jackson, J. Chem. Phys. 37, 428 (1962); JCPSA6 0021-9606 10.1063/1.1701338
- (1962) J. Chem. Phys. , vol.37 , pp. 428
- Blakely, J.M.¹ Jackson, K.A.²

38
- 27744468865
- JCPSA6 0021-9606 10.1063/1.1725687
- V. Ruth and J.P. Hirth, J. Chem. Phys. 41, 3139 (1964); JCPSA6 0021-9606 10.1063/1.1725687
- (1964) J. Chem. Phys. , vol.41 , pp. 3139
- Ruth, V.¹ Hirth, J.P.²

39
- 9944235378
- JCRGAE 0022-0248 10.1016/j.jcrysgro.2004.09.023
- W. Seifert, J. Cryst. Growth JCRGAE 0022-0248 272, 211 (2004). 10.1016/j.jcrysgro.2004.09.023
- (2004) J. Cryst. Growth , vol.272 , pp. 211
- Seifert, W.¹

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