Substrate-dependent orientation and polytype control in SiC nanowires grown on 4H-SiC substrates

Crystal Growth and Design

Volumn 11, Issue 2, 2011, Pages 538-541

  Krishnan, Bharat ^a   Thirumalai, Rooban Venkatesh K G ^a   Koshka, Yaroslav ^a   Sundaresan, Siddarth ^b   Levin, Igor ^c   Davydov, Albert V ^c   Merrett, J Neil ^d  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b GENESIC SEMICONDUCTOR INC   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC SUBSTRATE; CRYSTALLOGRAPHIC ORIENTATIONS; GROWTH DIRECTIONS; GROWTH MECHANISMS; HIGH DENSITY; MONOCRYSTALLINE; POLYTYPE CONTROL; POLYTYPES; SIC NANOWIRE; STACKING DISORDERS; VAPOR-LIQUID-SOLID GROWTH;

CHEMICAL VAPOR DEPOSITION; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; STACKING FAULTS;

SUBSTRATES;

EID: 79953861732     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg101405u     Document Type: Article

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