Growth mechanism of catalyst- and template-free group III-nitride nanorods

Journal of Crystal Growth

Volumn 310, Issue 16, 2008, Pages 3735-3740

  Won, Yong Sun ^a,b   Kim, Young Seok ^a   Kryliouk, Olga ^a,c   Anderson, Timothy J ^a  

^a University of Florida   (United States)

^b Samsung Electro Mechanics   (South Korea)

^c APPLIED MATERIALS INC   (United States)

Author keywords

A1. DFT calculation; A1. Phase equilibria; A3. Hydride vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

CATALYSIS; CRYSTAL GROWTH; ECOLOGY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; LIQUID PHASE EPITAXY; MECHANISMS; MOLECULAR BEAM EPITAXY; NANORODS; NANOSTRUCTURES; OLIGOMERS; POLYMERS; SEMICONDUCTING GALLIUM; STOICHIOMETRY; THERMOCHEMISTRY; THERMODYNAMICS; TWO DIMENSIONAL;

C -AXIS; DIRECTIONAL GROWTH; EQUILIBRIUM ANALYSIS; EXPERIMENTAL RESULTS; GAS PHASE; GROWTH MECHANISMS; HIGH TEMPERATURE (HT); HYDRIDE VAPOR-PHASE EPITAXY (HVPE); III NITRIDES; KINETIC (POLYM.); NANO PARTICLES; NANOROD GROWTH; OPTIMUM GROWTH CONDITIONS; SOLID-PHASE; TEMPLATE-FREE; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31); TWO-DIMENSIONAL (2D);

FILM GROWTH;

EID: 48149101271     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.05.045     Document Type: Article

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