Silicon nanocrystals: Fundamental theory and implications for stimulated emission

Advances in Optical Technologies

Volumn , Issue , 2008, Pages

  Belyakov, V A ^a   Burdov, V A ^a   Lockwood, R ^b   Meldrum, A ^b  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^b UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80051909049     PISSN: 16876393     EISSN: 16876407     Source Type: Journal    
DOI: 10.1155/2008/279502     Document Type: Review

References (194)

1. H. Takagi, H. Ogawa, Y. Yamazaki, A. Ishizaki, and T. Nakagiri, "Quantum size effects on photoluminescence in ultrafine Si particles," Applied Physics Letters, vol. 56, no. 24, pp. 2379-2380, 1990.
2. L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Applied Physics Letters, vol. 57, no. 10, pp. 1046-1048, 1990.
3. P. D. J. Calcott, K. J. Nash, L. T. Canham,M. J. Kane, and D. Brumhead, "Identification of radiative transitions in highly porous silicon," Journal of Physics: CondensedMatter, vol. 5, no. 7, pp. L91-L98, 1993.
4. P. D. J. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, "Spectroscopic identification of the luminescence mechanism of highly porous silicon," Journal of Luminescence, vol. 57, no. 1-6, pp. 257-269, 1993.
5. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franz ò, and F. Priolo, "Optical gain in silicon nanocrystals," Nature, vol. 408, no. 6811, pp. 440-444, 2000.
6. D. Kovalev, H. Heckler, G. Polisski, and F. Koch, "Optical properties of Si nanocrystals," Physica Status Solidi B, vol. 215, no. 2, pp. 871-932, 1999.
7. 2 superlattices: experimental evidence of structural modification in the 0.8-3.5 nm thickness region," Journal of Applied Physics, vol. 86, no. 10, pp. 5601-5608, 1999. (Pubitemid 129564567)
8. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, "Electronic states and luminescence in porous silicon quantum dots: the role of oxygen," Physical Review Letters, vol. 82, no. 1, pp. 197-200, 1999. (Pubitemid 129661984)
9. A. B. Filonov, S. Ossicini, F. Bassani, and F. Arnaud d'Avitaya, "Effect of oxygen on the optical properties of small silicon pyramidal clusters," Physical Review B, vol. 65, no. 19, Article ID 195317, 9 pages, 2002.
10. 2 with Si nanoinclusions produced by ion implantation," Surface Investigation X-Ray, Synchrotron and Neutron Techniques, vol. 14, no. 5, pp. 601- 604, 1998.
11. M. Fujii, A. Mimura, S. Hayashi, and K. Yamamoto, "Photoluminescence from Si nanocrystals dispersed in phosphosilicate glass thin films: improvement of photoluminescence efficiency," Applied Physics Letters, vol. 75, no. 2, pp. 184-186, 1999. (Pubitemid 129308523)
12. A. Miura, M. Fujii, S. Hayashi, D. Kovalev, and F. Koch, "Photoluminescence and free-electron absorption in heavily phosphorus-doped Si nanocrystals," Physical Review B, vol. 62, no. 19, pp. 12625-12627, 2000. (Pubitemid 32385168)
13. M. Fujii, A. Mimura, S. Hayashi, Y. Yamamoto, and K. Murakami, "Hyperfine structure of the electron spin resonance of phosphorus-doped Si nanocrystals," Physical Review Letters, vol. 89, no. 20, Article ID 206805, 4 pages, 2002.
14. M. Fujii, K. Toshikiyo, Y. Takase, Y. Yamaguchi, and S. Hayashi, "Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals," Journal of Applied Physics, vol. 94, no. 3, pp. 1990-1995, 2003.
15. M. Fujii, Y. Yamaguchi, Y. Takase, K. Ninomiya, and S. Hayashi, "Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities," Applied Physics Letters, vol. 85, no. 7, pp. 1158-1160, 2004.
16. 2 layers with embedded Si nanocrystals," Nuclear Instruments and Methods in Physics Research B, vol. 222, no. 3-4, pp. 497-504, 2004.
17. M. Fujii, Y. Yamaguchi, Y. Takase, K. Ninomiya, and S. Hayashi, "Photoluminescence from impurity codoped and compensated Si nanocrystals," Applied Physics Letters, vol. 87, no. 21, Article ID 211919, 3 pages, 2005.
18. G. A. Kachurin, S. G. Cherkova, V. A. Volodin, D. M. Marin, D. I. Tetelbaum, and H. Becker, "Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals," Semiconductors, vol. 40, no. 1, pp. 72-78, 2006. (Pubitemid 43333962)
19. J. Valenta, R. Juhasz, and J. Linnros, "Photoluminescence spectroscopy of single silicon quantum dots," Applied Physics Letters, vol. 80, no. 6, pp. 1070-1072, 2002.
20. I. Sychugov, R. Juhasz, J. Valenta, and J. Linnros, "Narrow luminescence linewidth of a silicon quantum dot," Physical Review Letters, vol. 94, no. 8, Article ID 087405, 4 pages, 2005.
21. F. Priolo, G. Franz ò, D. Pacifici, V. Vinciguerra, F. Iacona, and A. Irrera, "Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals," Journal of Applied Physics, vol. 89, no. 1, pp. 264-272, 2001. (Pubitemid 33703374)
22. I. Balberg, E. Savir, and J. Jedrzejewski, "The mutual exclusion of luminescence and transport in nanocrystalline silicon networks," Journal of Non-Crystalline Solids, vol. 338-340, pp. 102-105, 2004.
23. J. Heitmann, F. Müller, L. Yi, M. Zacharias, D. Kovalev, and F. Eichhorn, "Excitons in Si nanocrystals: confinement and migration effects," Physical Review B, vol. 69, no. 19, Article ID 195309, 7 pages, 2004.
24. T. Kawazoe, K. Kobayashi, and M. Ohtsu, "Optical nanofountain: a biomimetic device that concentrates optical energy in a nanometric region," Applied Physics Letters, vol. 86, no. 10, Article ID 103102, 3 pages, 2005.
25. T. Förster, "Versuche zum zwischenmolekularen. Übergang von elektronenanregungsenergie," Zeitschrift für Elektrochemie, vol. 53, pp. 93-100, 1949.
26. T. Förster, "Experimentelle und theoretische Untersuchung des zwischenmolekularen Übergangs von Elektronenanregungsenergie," Zeitschrift für Naturforschung A, vol. 4, pp. 321-327, 1949.
27. D. L. Dexter, "A theory of sensitized luminescence in solids," The Journal of Chemical Physics, vol. 21, no. 5, pp. 836-850, 1953.
28. C. R. Kagan, C. B. Murray, M. Nirmal, and M. G. Bawendi, "Electronic energy transfer in CdSe quantum dot solids," Physical Review Letters, vol. 76, no. 9, pp. 1517-1520, 1996. (Pubitemid 126638508)
29. S. A. Crooker, J. A. Hollingsworth, S. Tretiak, and V. I. Klimov, "Spectrally resolved dynamics of energy transfer in quantum-dot assemblies: towards engineered energy flows in artificial materials," Physical Review Letters, vol. 89, no. 18, Article ID 186802, 4 pages, 2002.
30. G. Allan and C. Delerue, "Energy transfer between semiconductor nanocrystals: validity of Förster's theory," Physical Review B, vol. 75, no. 19, Article ID 195311, 8 pages, 2007.
31. Y. Kanemitsu, "Photoluminescence spectrum and dynamics in oxidized silicon nanocrystals: a nanoscopic disorder system," Physical Review B, vol. 53, no. 20, pp. 13515-13520, 1996.
32. 2," Journal of Applied Physics, vol. 86, no. 11, pp. 6128-6134, 1999. (Pubitemid 129647823)
33. M. Dovrat, Y. Goshen, J. Jedrzejewski, I. Balberg, and A. Sa'ar, "Radiative versus nonradiative decay processes in silicon nanocrystals probed by time-resolved photoluminescence spectroscopy," Physical Review B, vol. 69, no. 15, Article ID 155311, 8 pages, 2004.
34. F. Trojánek, K. Neudert, M. Bittner, and P. Malý, "Picosecond photoluminescence and transient absorption in silicon nanocrystals," Physical Review B, vol. 72, no. 7, Article ID 075365, 6 pages, 2005.
35. 2," Physical Review B, vol. 73, no. 13, Article ID 132302, 4 pages, 2006.
36. C. Delerue, G. Allan, C. Reynaud, O. Guillois, G. Ledoux, and F. Huisken, "Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals," Physical Review B, vol. 73, no. 23, Article ID 235318, 4 pages, 2006.
37. A. Meldrum, R. F. Haglund Jr., L. A. Boatner, and C. W. White, "Nanocomposite materials formed by ion implantation," Advanced Materials, vol. 13, no. 19, pp. 1431-1444, 2001. (Pubitemid 32973061)
38. A.Meldrum, L. A. Boatner, and C.W.White, "Nanocomposites formed by ion implantation: recent developments and future opportunities," Nuclear Instruments and Methods in Physics Research B, vol. 178, no. 1-4, pp. 7-16, 2001. (Pubitemid 32517325)
39. 2 matrix," Applied Physics Letters, vol. 73, no. 20, pp. 2962-2964, 1998. (Pubitemid 128674200)
40. 2 glasses," Physical Review B, vol. 54, no. 20, pp. R14329-R14332, 1996.
41. 2 films and silica glasses," Journal of Applied Physics, vol. 84, no. 9, pp. 5210-5217, 1998. (Pubitemid 128559628)
42. L. Dal Negro, M. Cazzanelli, L. Pavesi, et al., "Dynamics of stimulated emission in silicon nanocrystals," Applied Physics Letters, vol. 82, no. 26, pp. 4636-4638, 2003.
43. L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, et al., "Nanocrystalline-silicon superlattice produced by controlled recrystallization," Applied Physics Letters, vol. 72, no. 1, pp. 43-45, 1998. (Pubitemid 128671194)
44. 2 superlattice approach," Applied Physics Letters, vol. 80, no. 4, pp. 661-663, 2002.
45. M. H. Nayfeh, S. Rao, N. Barry, et al., "Observation of laser oscillation in aggregates of ultrasmall silicon nanoparticles," Applied Physics Letters, vol. 80, no. 1, pp. 121-123, 2002.
46. A. Meldrum, A. Hryciw, A. N. MacDonald, et al., "Photoluminescence in the silicon-oxygen system," Journal of Vacuum Science and Technology A, vol. 24, no. 3, pp. 713-717, 2006.
47. J. Wang, X. F. Wang, Q. Li, A. Hryciw, and A. Meldrum, "The microstructure of SiO thin films: from nanoclusters to nanocrystals," Philosophical Magazine, vol. 87, no. 1, pp. 11-27, 2007. (Pubitemid 44836067)
48. G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, "Photoluminescence of size-separated silicon nanocrystals: confirmation of quantum confinement," Applied Physics Letters, vol. 80, no. 25, pp. 4834-4836, 2002.
49. T.-Y. Kim, N.-M. Park, K.-H. Kim, et al., "Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films," Applied Physics Letters, vol. 85, no. 22, pp. 5355-5357, 2004. (Pubitemid 40043576)
50. P. M. Fauchet, "Light emission from Si quantum dots," Materials Today, vol. 8, no. 1, pp. 26-33, 2005. (Pubitemid 40003367)
51. Y. Kanemitsu, S. Okamoto, M. Otobe, and S. Oda, "Photoluminescence mechanism in surface-oxidized silicon nanocrystals," Physical Review B, vol. 55, no. 12, pp. R7375-R7378, 1997.
52. 2 matrices," Solid State Communications, vol. 102, no. 7, pp. 533-537, 1997. (Pubitemid 127418591)
53. B. Garrido Fernandez, M. López, C. García, et al., "Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2," Journal of Applied Physics, vol. 91, no. 2, pp. 798-807, 2002.
54. T. van Buuren, L. N. Dinh, L. L. Chase, W. J. Siekhaus, and L. J. Terminello, "Changes in the electronic properties of Si nanocrystals as a function of particle size," Physical Review Letters, vol. 80, no. 17, pp. 3803-3806, 1998. (Pubitemid 128629849)
55. S. Schuppler, S. L. Friedman, M. A. Marcus, et al., "Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si," Physical Review B, vol. 52, no. 7, pp. 4910-4925, 1995.
56. 2: the mechanism of visible light emission," Applied Physics Letters, vol. 77, no. 20, pp. 3143-3145, 2000.
57. S. Takeoka, M. Fujii, and S. Hayashi, "Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime," Physical Review B, vol. 62, no. 24, pp. 16820-16825, 2000. (Pubitemid 32372778)
58. M. Lannoo, C. Delerue, and G. Allan, "Theory of radiative and nonradiative transitions for semiconductor nanocrystals," Journal of Luminescence, vol. 70, no. 1-6, pp. 170-184, 1996. (Pubitemid 126361851)
59. 2," Applied Physics Letters, vol. 82, no. 10, pp. 1595-1597, 2003.
60. L. Dal Negro, M. Cazzanelli, N. Daldosso, et al., "Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals," Physica E, vol. 16, no. 3-4, pp. 297-308, 2003.
61. M. Fujii, D. Kovalev, B. Goller, S. Minobe, S. Hayashi, and V. Yu. Timoshenko, "Time-resolved photoluminescence studies of the energy transfer from excitons confined in Si nanocrystals to oxygenmolecules," Physical Review B, vol. 72, no. 16, Article ID 165321, 8 pages, 2005.
62. S. Miura, T. Nakamura, M. Fujii, M. Inui, and S. Hayashi, "Size dependence of photoluminescence quantum efficiency of Si nanocrystals," Physical Review B, vol. 73, no. 24, Article ID 245333, 5 pages, 2006.
63. A. Yu. Kobitski, K. S. Zhuravlev, H. P. Wagner, and D. R. T. Zahn, "Self-trapped exciton recombination in silicon nanocrystals," Physical Review B, vol. 63, no. 11, Article ID 115423, 5 pages, 2001.
64. A. Sa'ar, M. Dovrat, J. Jedrzejewski, and I. Balberg, "Optical inter- and intra-band transitions in silicon nanocrystals: the role of surface vibrations," Physica E, vol. 38, no. 1-2, pp. 122- 127, 2007. (Pubitemid 46561458)
65. F. A. Reboredo, A. Franceschetti, and A. Zunger, "Excitonic transitions and exchange splitting in Si quantum dots," Applied Physics Letters, vol. 75, no. 19, pp. 2972-2974, 1999. (Pubitemid 129564495)
66. F. A. Reboredo, A. Franceschetti, and A. Zunger, "Dark excitons due to direct Coulomb interactions in silicon quantum dots," Physical Review B, vol. 61, no. 19, pp. 13073-13087, 2000.
67. D. H. Feng, Z. Z. Xu, T. Q. Jia, X. X. Li, and S. Q. Gong, "Quantum size effects on exciton states in indirect-gap quantum dots," Physical Review B, vol. 68, no. 3, Article ID 035334, 7 pages, 2003.
68. H.-Ch. Weissker, J. Furthmüller, and F. Bechstedt, "Structure-and spin-dependent excitation energies and lifetimes of Si and Ge nanocrystals from ab initio calculations," Physical Review B, vol. 69, no. 11, Article ID 115310, 8 pages, 2004.
69. 2 matrix by means of dose alignment and doping," Nanotechnology, vol. 11, no. 4, pp. 295-297, 2000. (Pubitemid 32087361)
70. 2 with Si nanoinclusions," Nuclear Instruments and Methods in Physics Research B, vol. 174, no. 1-2, pp. 123-129, 2001. (Pubitemid 32874587)
71. 2: nc-Si system," Physics of the Solid State, vol. 46, no. 1, pp. 17-21, 2004. (Pubitemid 38161486)
72. 2 films with silicon quantum dots," Journal of Nanoscience and Nanotechnology, vol. 8, no. 2, pp. 780-788, 2008. (Pubitemid 351584673)
73. V. A. Belyakov and V. A. Burdov, "Valley-orbit splitting in doped nanocrystalline silicon: kp calculations," Physical Review B, vol. 76, no. 4, Article ID 045335, 12 pages, 2007.
74. B. Delley and E. F. Steigmeier, "Size dependence of band gaps in silicon nanostructures," Applied Physics Letters, vol. 67, no. 16, p. 2370, 1995.
75. I. Vasiliev, S. Öǧüt, and J. R. Chelikowsky, "Ab initio absorption spectra and optical gaps in nanocrystalline silicon," Physical Review Letters, vol. 86, no. 9, pp. 1813-1816, 2001. (Pubitemid 32252783)
76. C. S. Garoufalis, A. D. Zdetsis, and S. Grimme, "High level ab initio calculations of the optical gap of small silicon quantum dots," Physical Review Letters, vol. 87, no. 27, Article ID 276402, 4 pages, 2001.
77. H.-Ch. Weissker, J. Furthmüller, and F. Bechstedt, "Optical properties of Ge and Si nanocrystallites from ab initio calculations. II.Hydrogenated nanocrystallites," Physical Review B, vol. 65, no. 15, Article ID 155328, 7 pages, 2002.
78. X.-H. Peng, S. Ganti, A. Alizadeh, P. Sharma, S. K. Kumar, and S. K. Nayak, "Strain-engineered photoluminescence of silicon nanoclusters," Physical Review B, vol. 74, no. 3, Article ID 035339, 5 pages, 2006.
79. L.-W. Wang and A. Zunger, "Solving Schrödinger's equation around a desired energy: application to silicon quantum dots," The Journal of Chemical Physics, vol. 100, no. 3, pp. 2394-2397, 1994.
80. S. Öǧüt, J. R. Chelikowsky, and S. G. Louie, "Quantum confinement and optical gaps in Si nanocrystals," Physical Review Letters, vol. 79, no. 9, pp. 1770-1773, 1997. (Pubitemid 127645583)
81. A. Franceschetti and A. Zunger, "Pseudopotential calculations of electron and hole addition spectra of InAs, InP, and Si quantum dots," Physical Review B, vol. 62, no. 4, pp. 2614-2623, 2000.
82. C. Bulutay, "Interband, intraband, and excited-state direct photon absorption of silicon and germanium nanocrystals embedded in a wide band-gap lattice," Physical Review B, vol. 76, no. 20, Article ID 205321, 14 pages, 2007.
83. S. Y. Ren and J. D. Dow, "Hydrogenated Si clusters: band formation with increasing size," Physical Review B, vol. 45, no. 12, pp. 6492-6496, 1992.
84. N. A. Hill and K. B. Whaley, "Size dependence of excitons in silicon nanocrystals," Physical Review Letters, vol. 75, no. 6, pp. 1130-1133, 1995.
85. Y. M. Niquet, C. Delerue, G. Allan, and M. Lannoo, "Method for tight-binding parametrization: application to silicon nanostructures," Physical Review B, vol. 62, no. 8, pp. 5109- 5116, 2000.
86. S. Lee, L. Jönsson, J. W. Wilkins, G. W. Bryant, and G. Klimeck, "Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions," Physical Review B, vol. 63, no. 19, Article ID 195318, 13 pages, 2001.
87. M. Rohlfing and S. G. Louie, "Excitonic effects and the optical absorption spectrum of hydrogenated Si clusters," Physical Review Letters, vol. 80, no. 15, pp. 3320-3323, 1998. (Pubitemid 128621790)
88. C. Delerue, M. Lannoo, and G. Allan, "Excitonic and quasiparticle gaps in Si nanocrystals," Physical Review Letters, vol. 84, no. 11, pp. 2457-2460, 2000.
89. E. Luppi, F. Iori, R. Magri, et al., "Excitons in silicon nanocrystallites: the nature of luminescence," Physical Review B, vol. 75, no. 3, Article ID 033303, 4 pages, 2007.
90. T. Takagahara and K. Takeda, "Theory of the quantum confinement effect on excitons in quantum dots of indirectgap materials," Physical Review B, vol. 46, no. 23, pp. 15578- 15581, 1992.
91. J. M. Ferreyra and C. R. Proetto, "Quantum size effects on excitonic Coulomb and exchange energies in finite-barrier semiconductor quantum dots," Physical Review B, vol. 60, no. 15, pp. 10672-10675, 1999.
92. V. A. Burdov, "Electron and hole spectra of silicon quantum dots," Journal of Experimental and Theoretical Physics, vol. 94, no. 2, pp. 411-418, 2002.
93. V. A. Burdov, "Dependence of the optical gap of Si quantum dots on the dot size," Semiconductors, vol. 36, no. 10, pp. 1154-1158, 2002.
94. A. S. Moskalenko and I. N. Yassievich, "Excitons in Si nanocrystals," Physics of the Solid State, vol. 46, no. 8, pp. 1508-1519, 2004. (Pubitemid 39234228)
95. A. S. Moskalenko, J. Berakdar, A. A. Prokofiev, and I. N. Yassievich, "Single-particle states in spherical Si/SiO2 quantum dots," Physical Review B, vol. 76, no. 8, Article ID 085427, 9 pages, 2007.
96. M. Bruno, M. Palummo, A. Marini, R. Del Sole, and S. Ossicini, "From Si nanowires to porous silicon: the role of excitonic effects," Physical Review Letters, vol. 98, no. 3, Article ID 036807, 4 pages, 2007.
97. L. Yang, C. D. Spataru, S. G. Louie, and M. Y. Chou, "Enhanced electron-hole interaction and optical absorption in a silicon nanowire," Physical Review B, vol. 75, no. 20, Article ID 201304, 4 pages, 2007.
98. M. Voos, Ph. Uzan, C. Delalande, G. Bastard, and A. Halimaoui, "Visible photoluminescence from porous silicon: a quantum confinement effect mainly due to holes," Applied Physics Letters, vol. 61, no. 10, pp. 1213-1215, 1992.
99. A. A. Kopylov, "Two-hump" structure and parameters of the X minimum of the conduction band of cubic III-V semiconductors," Soviet Physics. Semiconductors-USSR, vol. 16, no. 12, pp. 1380-1383, 1982. (Pubitemid 13545997)
100. C. Delerue and M. Lannoo, Nanostructures: Theory and Modeling, Springer, Berlin, Germany, 2004.
101. 2 interface," Applied Physics Letters, vol. 43, no. 6, pp. 563-565, 1983.
102. M. Nishida, "Electronic structure of silicon quantum dots: calculations of energy-gap redshifts due to oxidation," Journal of Applied Physics, vol. 98, no. 2, Article ID 023705, 6 pages, 2005.
103. 2: beyond the quantum confinement effect," Physical Review B, vol. 71, no. 3, Article ID 035340, 15 pages, 2005.
104. L. E. Ramos, J. Furthmüller, and F. Bechstedt, "Reduced influence of defects on oxidized Si nanocrystallites," Physical Review B, vol. 71, no. 3, Article ID 035328, 7 pages, 2005.
105. D. Vuillaume, D. Deresmes, and D. Stiévenard, "Temperature- dependent study of spin-dependent recombination at silicon dangling bonds," Applied Physics Letters, vol. 64, no. 13, pp. 1690-1692, 1994.
106. M. Lannoo, C. Delerue, and G. Allan, "Nonradiative recombination on dangling bonds in silicon crystallites," Journal of Luminescence, vol. 57, no. 1-6, pp. 243-247, 1993.
107. 2 interface," Physical Review B, vol. 44, no. 4, pp. 1724-1733, 1991.
108. W. Kohn and J. M. Luttinger, "Theory of donor levels in silicon," Physical Review, vol. 97, no. 6, p. 1721, 1955.
109. W. Kohn and J. M. Luttinger, "Theory of donor states in silicon," Physical Review, vol. 98, no. 4, pp. 915-922, 1955.
110. A. Baldereschi, "Valley-orbit interaction in semiconductors," Physical Review B, vol. 1, no. 12, pp. 4673-4677, 1970.
111. S. T. Pantelides and C. T. Sah, "Theory of localized states in semiconductors. I. New results using an old method," Physical Review B, vol. 10, no. 2, pp. 621-637, 1974.
112. R. A. Faulkner, "Higher donor excited states for prolatespheroid conduction bands: a reevaluation of silicon and germanium," Physical Review, vol. 184, no. 3, pp. 713-721, 1969.
113. Z. Zhou, M. L. Steigerwald, R. A. Friesner, L. Brus, and M. S. Hybertsen, "Structural and chemical trends in doped silicon nanocrystals: first-principles calculations," Physical Review B, vol. 71, no. 24, Article ID 245308, 8 pages, 2005.
114. S. Ossicini, E. Degoli, F. Iori, et al., "Simultaneously Band P-doped silicon nanoclusters: formation energies and electronic properties," Applied Physics Letters, vol. 87, no. 17, Article ID 173120, 3 pages, 2005.
115. L. E. Ramos, E. Degoli, G. Cantele, et al., "Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites," Journal of Physics: Condensed Matter, vol. 19, no. 46, Article ID 466211, 12 pages, 2007.
116. F. Iori, E. Degoli, R. Magri, et al., "Engineering silicon nanocrystals: theoretical study of the effect of codoping with boron and phosphorus," Physical Review B, vol. 76, no. 8, Article ID 085302, 14 pages, 2007.
117. Q. Xu, J.-W. Luo, S.-S. Li, J.-B. Xia, J. Li, and S.-H. Wei, "Chemical trends of defect formation in Si quantum dots: the case of group-III and group-V dopants," Physical Review B, vol. 75, no. 23, Article ID 235304, 6 pages, 2007.
118. V. A. Belyakov and V. A. Burdov, "Chemical-shift enhancement for strongly confined electrons in silicon nanocrystals," Physics Letters A, vol. 367, no. 1-2, pp. 128-134, 2007.
119. V. A. Belyakov and V. A. Burdov, "Anomalous splitting of the hole states in silicon quantum dots with shallow acceptors," Journal of Physics: CondensedMatter, vol. 20, no. 2, Article ID 025213, 13 pages, 2008.
120. S. Y. Ren, "Quantum confinement of edge states in Si crystallites," Physical Review B, vol. 55, no. 7, pp. 4665-4669, 1997.
121. B. Delley and E. F. Steigmeier, "Quantum confinement in Si nanocrystals," Physical Review B, vol. 47, no. 3, pp. 1397- 1400, 1993.
122. T. Blomquist and G. Kirczenow, "Poisson-Schrödinger and ab initio modeling of doped Si nanocrystals: reversal of the charge transfer between host and dopant atoms," Physical Review B, vol. 71, no. 4, Article ID 045301, 9 pages, 2005.
123. F. Trani, D. Ninno, G. Cantele, et al., "Screening in semiconductor nanocrystals: ab initio results and Thomas-Fermi theory," Physical Review B, vol. 73, no. 24, Article ID 245430, 9 pages, 2006.
124. G. Cantele, E. Degoli, E. Luppi, et al., "First-principles study of n- and p-doped silicon nanoclusters," Physical Review B, vol. 72, no. 11, Article ID 113303, 4 pages, 2005.
125. F. Iori, E. Degoli, E. Luppi, et al., "Doping in silicon nanocrystals: an ab initio study of the structural, electronic and optical properties," Journal of Luminescence, vol. 121, no. 2, pp. 335-339, 2006. (Pubitemid 44740174)
126. Y. Hada and M. Eto, "Electronic states in silicon quantum dots: multivalley artificial atoms," Physical Review B, vol. 68, no. 15, Article ID 155322, 7 pages, 2003.
127. D. V. Melnikov and J. R. Chelikowsky, "Quantum confinement in phosphorus-doped silicon nanocrystals," Physical Review Letters, vol. 92, no. 4, Article ID 046802, 4 pages, 2004.
128. M. Lannoo, C. Delerue, and G. Allan, "Screening in semiconductor nanocrystallites and its consequences for porous silicon," Physical Review Letters, vol. 74, no. 17, pp. 3415-3418, 1995.
129. S. Öǧüt, R. Burdick, Y. Saad, and J. R. Chelikowsky, "Ab initio calculations for large dielectricmatrices of confined systems," Physical Review Letters, vol. 90, no. 12, Article ID 127401, 4 pages, 2003.
130. C. Delerue, M. Lannoo, and G. Allan, "Concept of dielectric constant for nanosized systems," Physical Review B, vol. 68, no. 11, Article ID 115411, 4 pages, 2003.
131. X. Cartoixà and L.-W. Wang, "Microscopic dielectric response functions in semiconductor quantum dots," Physical Review Letters, vol. 94, no. 23, Article ID 236804, 4 pages, 2005.
132. F. Trani, D. Ninno, and G. Iadonisi, "Tight-binding formulation of the dielectric response in semiconductor nanocrystals," Physical Review B, vol. 76, no. 8, Article ID 085326, 9 pages, 2007.
133. A. Franceschetti and M. C. Troparevsky, "Screening of point charges in Si quantum dots," Physical Review B, vol. 72, no. 16, Article ID 165311, 4 pages, 2005.
134. G. Onida, L. Reining, and A. Rubio, "Electronic excitations: density-functional versus many-body Green's-function approaches," Reviews of Modern Physics, vol. 74, no. 2, pp. 601-659, 2002.
135. M. Shishkin, M. Marsman, and G. Kresse, "Accurate quasiparticle spectra from self-consistent GW calculations with vertex corrections," Physical Review Letters, vol. 99, no. 24, Article ID 246403, 4 pages, 2007.
136. L.-W. Wang and X. Cartoixà, "Motif-based polarization model: calculations of the dielectric function and polarization in large nanostructures," Physical Review B, vol. 75, no. 20, Article ID 205334, 5 pages, 2007.
137. L.-W. Wang and A. Zunger, "Dielectric constants of silicon quantum dots," Physical Review Letters, vol. 73, no. 7, pp. 1039-1042, 1994. (Pubitemid 24976383)
138. R. Tsu and D. Babić, "Doping of a quantum dot," Applied Physics Letters, vol. 64, no. 14, pp. 1806-1808, 1994.
139. R. Tsu, D. Babić, and L. Ioriatti Jr., "Simple model for the dielectric constant of nanoscale silicon particle," Journal of Applied Physics, vol. 82, no. 3, pp. 1327-1329, 1997. (Pubitemid 127589989)
140. V. A. Belyakov and V. A. Burdov, "Fine splitting of electron states in silicon nanocrystal with a hydrogen-like shallow donor," Nanoscale Research Letters, vol. 2, no. 11, pp. 569-575, 2007. (Pubitemid 350075743)
141. N. O. Lipari and A. Baldereschi, "Interpretation of acceptor spectra in semiconductors," Solid State Communications, vol. 25, no. 9, pp. 665-668, 1978.
142. A. Baldereschi and N. O. Lipari, "Spherical model of shallow acceptor states in semiconductors," Physical Review B, vol. 8, no. 6, pp. 2697-2709, 1973.
143. A. Baldereschi and N. O. Lipari, "Cubic contributions to the spherical model of shallow acceptor states," Physical Review B, vol. 9, no. 4, pp. 1525-1539, 1974.
144. N. O. Lipari, A. Baldereschi, and M. L. W. Thewalt, "Central cell effects on acceptor spectra in Si and Ge," Solid State Communications, vol. 33, no. 3, pp. 277-279, 1980. (Pubitemid 10472815)
145. A. Thränhardt, C. Ell, G. Khitrova, and H. M. Gibbs, "Relation between dipole moment and radiative lifetime in interface fluctuation quantum dots," Physical Review B, vol. 65, no. 3, Article ID 035327, 6 pages, 2002.
146. 2 photoluminescence," in 10th International Symposium on Nanostructures: Physics and Technology, vol. 5023 of Proceedings of SPIE, pp. 186-189, St. Petersburg, Russia, June 2003.
147. M. S. Hybertsen, "Absorption and emission of light in nanoscale silicon structures," Physical Review Letters, vol. 72, no. 10, pp. 1514-1517, 1994. (Pubitemid 24974967)
148. C. Delerue, G. Allan, andM. Lannoo, "Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystals," Physical Review B, vol. 64, no. 19, Article ID 193402, 4 pages, 2001.
149. V. A. Belyakov, V. A. Burdov, D. M. Gaponova, A. N. Mikhaylov, D. I. Tetelbaum, and S. A. Trushin, "Phononassisted radiative electron-hole recombination in silicon quantum dots," Physics of the Solid State, vol. 46, no. 1, pp. 27-31, 2004. (Pubitemid 38161488)
150. O. J. Glembocki and F. H. Pollak, "Calculation of the γ-δ electron-phonon and hole-phonon scattering matrix elements in silicon," Physical Review Letters, vol. 48, no. 6, pp. 413-416, 1982.
151. O. J. Glembocki and F. H. Pollak, "Relative intensities of indirect transitions: electron-phonon and hole-phonon interaction matrix elements in Si (TO) and GaP (LA,TA)," Physical Review B, vol. 25, no. 2, pp. 1193-1204, 1982.
152. I. Mihalcescu, J. C. Vial, A. Bsiesy, et al., "Saturation and voltage quenching of porous-silicon luminescence and the importance of the Auger effect," Physical Review B, vol. 51, no. 24, pp. 17605-17613, 1995.
153. 2 with Si nanocrystals," Journal of Luminescence, vol. 121, no. 2, pp. 222-225, 2006. (Pubitemid 44633077)
154. D. V. Talapin, A. L. Rogach, A. Kornowski, M. Haase, and H. Weller, "Highly luminescent monodisperse CdSe and CdSe/ZnS nanocrystals synthesized in a hexadecylaminetrioctylphosphine oxide-trioctylphospine mixture," Nano Letters, vol. 1, no. 4, pp. 207-211, 2001. (Pubitemid 33672719)
155. R. Espiau de Lamaëstre and H. Bernas, "Significance of lognormal nanocrystal size distributions," Physical Review B, vol. 73, no. 12, Article ID 125317, 9 pages, 2006.
156. R. Espiau de Lamaëstre and H. Bernas, "Ion beam-induced quantum dot synthesis in glass," Nuclear Instruments and Methods in Physics Research, Section B, vol. 257, no. 1-2, pp. 1-5, 2007. (Pubitemid 46498172)
157. R. B. Bergmann, J. Köhler, R. Dassow, C. Zaczek, and J. H. Werner, "Nucleation and growth of crystalline silicon films on glass for solar cells," Physica Status Solidi (A), vol. 166, no. 2, pp. 587-602, 1998. (Pubitemid 128623279)
158. R. B. Bergmann, J. Krinke, H. P. Strunk, and J. H. Werner, "Deposition and characterization of polycrystalline silicon films on glass for thin film solar cells," in Materials Research Society Symposium Proceedings, vol. 467, pp. 325-330, San Francisco, Calif, USA, March 1997.
159. S. K. Kurtz and F. M. A. Carpay, "Microstructure and normal grain growth in metals and ceramics-I: theory," Journal of Applied Physics, vol. 51, no. 11, pp. 5725-5744, 1980. (Pubitemid 11470593)
160. R. Lockwood, A. Hryciw, and A. Meldrum, "Nonresonant carrier tunneling in arrays of silicon nanocrystals," Applied Physics Letters, vol. 89, no. 26, Article ID 263112, 3 pages, 2006.
161. 2 superlattices," Journal of Applied Physics, vol. 87, no. 11, pp. 8165-8173, 2000.
162. M. Glover and A. Meldrum, "Effect of "buffer layers" on the optical properties of silicon nanocrystal superlattices," Optical Materials, vol. 27, no. 5, pp. 977-982, 2005. (Pubitemid 40211965)
163. A. Meldrum, L. A. Boatner, C. W. White, and R. C. Ewing, "Ion irradiation effects in nonmetals: formation of nanocrystals and novel microstructures," Materials Research Innovations, vol. 3, no. 4, pp. 190-204, 2000.
164. F. Huisken, G. Ledoux, O. Guillois, and C. Reynaud, "Lightemitting silicon nanocrystals from laser pyrolysis," Advanced Materials, vol. 14, no. 24, pp. 1861-1865, 2002.
165. M. Cazzanelli, D. Navarro-Urriós, F. Riboli, et al., "Optical gain in monodispersed silicon nanocrystals," Journal of Applied Physics, vol. 96, no. 6, pp. 3164-3171, 2004.
166. I. Y. Choi, K. H. Byoun, M. H. Jung, H.-J. Lim, and H. W. Lee, "Synthesis of cyano cyclic olefins through ring-closing metathesis," Bulletin of the Korean Chemical Society, vol. 25, no. 9, pp. 1305-1306, 2004.
167. L. Pavesi and M. Ceschini, "Stretched-exponential decay of the luminescence in porous silicon," Physical Review B, vol. 48, no. 23, pp. 17625-17628, 1993.
168. H. E. Roman and L. Pavesi, "Monte Carlo simulations of the recombination dynamics in porous silicon," Journal of Physics: Condensed Matter, vol. 8, no. 28, pp. 5161-5187, 1996. (Pubitemid 126628583)
169. O. Guillois, N. Herlin-Boime, C. Reynaud, G. Ledoux, and F. Huisken, "Photoluminescence decay dynamics of noninteracting silicon nanocrystals," Journal of Applied Physics, vol. 95, no. 7, pp. 3677-3682, 2004.
170. M. N. Berberan-Santos, E. N. Bodunov, and B. Valeur, "Mathematical functions for the analysis of luminescence decays with underlying distributions 1. Kohlrausch decay function (stretched exponential)," Chemical Physics, vol. 315, no. 1-2, pp. 171-182, 2005. (Pubitemid 41058929)
171. J. Heitmann, F. Müller, M. Zacharias, and U. Gösele, "Silicon nanocrystals: size matters," Advanced Materials, vol. 17, no. 7, pp. 795-803, 2005. (Pubitemid 40532902)
172. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, "A silicon nanocrystals based memory," Applied Physics Letters, vol. 68, no. 10, pp. 1377-1379, 1996. (Pubitemid 126688256)
173. T. Z. Lu, M. Alexe, R. Scholz, V. Talelaev, and M. Zacharias, "Multilevel charge storage in silicon nanocrystalmultilayers," Applied Physics Letters, vol. 78, no. 20, Article ID 202110, 3 pages, 2005.
174. S. Muto, T. Inata, A. Tackeuchi, Y. Sugiyama, and T. Fujii, "Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures," Applied Physics Letters, vol. 58, no. 21, pp. 2393-2395, 1991.
175. S. Haacke, N. T. Pelekanos, H. Mariette, M. Zigone, A. P. Heberle, and W. W. Rühle, "Tunneling dynamics in CdTe/(Cd,Zn)Te asymmetric double-quantum-well structures," Physical Review B, vol. 47, no. 24, pp. 16643-16646, 1993.
176. A. Tackeuchi, T. Kuroda, K. Mase, Y. Nakata, and N. Yokoyama, "Dynamics of carrier tunneling between vertically aligned double quantum dots," Physical Review B, vol. 62, no. 3, pp. 1568-1571, 2000.
177. T. Förster, "Zwischenmolekulare Energiewanderung und Fluoreszenz," Annalen der Physik, vol. 2, no. 1-2, pp. 55-75, 1948.
178. C. B. Murray, C. R. Kagan, and M. G. Bawendi, "Synthesis and characterization of monodisperse nanocrystals and close-packed nanocrystal assemblies," Annual Review of Materials Science, vol. 30, pp. 545-610, 2000.
179. G. Liu and B. Jacquier, Eds., Spectroscopic Properties of Rare Earths in Optical Materials, Springer, New York, NY, USA, 2005.
180. T. Miyakawa and D. L. Dexter, "Phonon sidebands, multiphonon relaxation of excited states, and phonon-assisted energy transfer between ions in solids," Physical Review B, vol. 1, no. 7, pp. 2961-2969, 1970.
181. R. Reisfeld, "Rare earths complexes in sol gel glasses," Materials Science, vol. 20, pp. 5-18, 2002.
182. 12 at very high temperatures," Journal of Luminescence, vol. 101, no. 1-2, pp. 147-153, 2003. (Pubitemid 35459635)
183. 3+-doped sodalime silicate and aluminosilicate glasses," Physical Review B, vol. 56, no. 15, pp. 9302-9318, 1997.
184. F. Pellé, N. Gardant, and F. Auzel, "Effect of excited-state population density on nonradiative multiphonon relaxation rates of rare-earth ions," Journal of the Optical Society of America B, vol. 15, no. 2, pp. 667-679, 1998. (Pubitemid 128575240)
185. N. Yamada, S. Shionoya, and T. Kushida, "Phonon-assisted energy transfer between trivalent rare earth ions," Journal of the Physical Society of Japan, vol. 32, no. 6, pp. 1577-1586, 1972.
186. H. Kuhn, "Classical aspects of energy transfer in molecular systems," The Journal of Chemical Physics, vol. 53, no. 1, pp. 101-108, 1970.
187. L. Dal Negro, M. Cazzanelli, B. Danese, et al., "Light amplification in silicon nanocrystals by pump and probe transmission measurements," Journal of Applied Physics, vol. 96, no. 10, pp. 5747-5755, 2004.
188. 2 matrix: ultrafast photoluminescence and optical gain," Journal of Non-Crystalline Solids, vol. 352, no. 28-29, pp. 3041-3046, 2006. (Pubitemid 44041021)
189. P. M. Fauchet, J. Ruan, H. Chen, et al., "Optical gain in different silicon nanocrystal systems," Optical Materials, vol. 27, no. 5, pp. 745-749, 2005. (Pubitemid 40211923)
190. M. H. Nayfeh, N. Barry, J. Therrien, O. Akcakir, E. Gratton, and G. Belomoin, "Stimulated blue emission in reconstituted films of ultrasmall silicon nanoparticles," Applied Physics Letters, vol. 78, no. 8, pp. 1131-1133, 2001. (Pubitemid 33662130)
191. J. Valenta, K. Luterová, R. Tomasiunas, K. Dohnalová, B. Hönerlage, and I. Pelant, "Optical gain measurements with variable stripe length technique," in Towards the First Silicon Laser, L. Pavesi, S. Gaponenko, and L. Dal Negro, Eds., vol. 93 of NATO Science Series, pp. 223-242, Kluwer Academic Publishers, Dordrecht, The Netherlands, 2003.
192. H. Lee, J. H. Shin, and N. Park, "Performance analysis of nanocluster-Si sensitized Er-doped waveguide amplifier using top-pumped 470nm LED," Optics Express, vol. 13, no. 24, pp. 9881-9889, 2005. (Pubitemid 41692760)
193. V. I. Klimov, S. A. Ivanov, J. Nanda, et al., "Single-exciton optical gain in semiconductor nanocrystals," Nature, vol. 447, no. 7143, pp. 441-446, 2007. (Pubitemid 46816742)
194. 2 thin films from solution processable hydrogen silsesquioxane," Advanced Materials, vol. 19, no. 21, pp. 3513-3516, 2007. (Pubitemid 350134591)