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Volumn 91, Issue 2, 2002, Pages 798-807

Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; AVERAGE SIZE; DARK FIELD; EMISSION ENERGIES; EMISSION MECHANISM; EMISSION YIELDS; FORMING GAS; GROWTH STAGES; INTERFACE PASSIVATION; INVERSE CORRELATION; NANOCRYSTAL SIZES; NON-RADIATIVE CHANNELS; OPTOELECTRONIC PROPERTIES; PARAMAGNETIC CENTERS; PL EMISSION; PL EMISSION ENERGIES; PL INTENSITY; POST ANNEALING; RADIATIVE RECOMBINATION; RIPENING PROCESS; SI NANOCRYSTAL; SPECTRAL EMISSION; SPECTRAL SHAPES; STOKES SHIFT; TIME-SCALES;

EID: 0037080687     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1423768     Document Type: Article
Times cited : (280)

References (56)
  • 1
    • 77956700032 scopus 로고    scopus 로고
    • edited by D. Lockwood (Academic, New York)
    • L. Brus in Semiconductors and Semimetals, edited by D. Lockwood (Academic, New York, 1998), Vol. 49, p. 303.
    • (1998) Semiconductors and Semimetals , vol.49 , pp. 303
    • Brus, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.