Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites

Journal of Physics Condensed Matter

Volumn 19, Issue 46, 2007, Pages

  Ramos, L E ^a   Degoli, Elena ^b   Cantele, G ^c   Ossicini, Stefano ^b   Ninno, D ^c   Furthmuller J ^a   Bechstedt, F ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ENERGY GAP; IMPURITIES; SILICON; SPIN POLARIZATION;

ENERGY DIFFERENCE; PSEUDOPOTENTIAL METHOD; STRUCTURAL FEATURES;

NANOCRYSTALLITES;

EID: 36048972991     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/46/466211     Document Type: Article

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