Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

Applied Physics Letters

Volumn 85, Issue 22, 2004, Pages 5355-5357

  Kim, Tae Youb ^a   Park, Nae Man ^a   Kim, Kyung Hyun ^a   Sung, Gun Yong ^a   Ok, Young Woo ^b   Seong, Tae Yeon ^b   Choi, Cheol Jong ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SILICA; SILICON NITRIDE;

GROWTH TEMPERATURE; POSTANNEALING PROCESS; QUANTUM CONFINEMENT; ROOM TEMPERATURE;

NANOSTRUCTURED MATERIALS;

EID: 10844286760     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814429     Document Type: Article

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