The Influence of P+, B+, and N+ Ion Implantation on the Luminescence Properties of the SiO2: nc-Si System

Physics of the Solid State

Volumn 46, Issue 1, 2004, Pages 17-21

  Tetelbaum, D I ^a   Gorshkov, O N ^a   Burdov, V A ^a   Trushin, S A ^a   Mikhaylov, A N ^a   Gaponova, D M ^b   Morozov, S V ^b   Kovalev, A I ^c  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c BARDIN CENTRAL RESEARCH INSTITUTE OF FERROUS METALLURGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0742321358     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1641912     Document Type: Conference Paper

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