Quantum Confinement in Phosphorus-Doped Silicon Nanocrystals

Physical Review Letters

Volumn 92, Issue 4, 2004, Pages 468021-468024

  Melnikov, Dmitriy V ^a   Chelikowsky, James R ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; BOUNDARY CONDITIONS; CARRIER CONCENTRATION; CHEMICAL BONDS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; HYDROGENATION; IMPURITIES; IONIZATION; PHOSPHORUS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

ELECTRON DELOCALIZATION; ELECTRON IONIZATION; IONIZATION ENERGY; QUANTUM CONFINEMENT;

NANOSTRUCTURED MATERIALS;

EID: 1442307084     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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