First-principles study of n- and p-doped silicon nanoclusters

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 11, 2005, Pages

  Cantele, G ^a   Degoli, Elena ^b   Luppi, Eleonora ^b   Magri, Rita ^b   Ninno, D ^a   Iadonisi, G ^a   Ossicini, Stefano ^b  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29744437691     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.113303     Document Type: Article

References (18)

1. G. Polisski, D. Kovalev, G. Dollinger, T. Sulima, and F. Koch, Physica B PHYBE3 0921-4526 10.1016/S0921-4526(99)00562-1 274, 951 (1999). Microwave and far-infrared investigations have shown no significant free carrier contributions to absorption, even if the dopant content increases with the sample etching, ruling out that the increase in resistance is related to the lack of continuous paths for the current in the porous Si network.
2. L. Boarino, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64.205308 64, 205308 (2001).
3. V. Yu. Timoshenko, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64. 085314 64, 085314 (2001).
4. F. Geobaldo, Sens. Actuators B SABCEB 0925-4005 10.1016/j.snb.2003.12.020 100, 205 (2004).
5. M. Lannoo, C. Delerue, and G. Allan, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.74.3415 74, 3415 (1995).
6. D. V. Melnikov and J. R. Chelikowsky, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.92.046802 92, 046802 (2004).
7. S. Baroni, http://www.pwscf.org/
8. D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.41.7892 41, R7892 (1990).
9. G. Makov and M. C. Payne, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.4014 51, 4014 (1995).
10. E. Degoli, G. Cantele, E. Luppi, R. Magri, D. Ninno, O. Bisi, and S. Ossicini, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.155411 69, 155411 (2004).
11. S. B. Zhang and J. E. Northrup, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.67.2339 67, 2339 (1991).
12. X. Luo, S. B. Zhang, and S. H. Wei, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.90.026103 90, 026103 (2003).
13. L. G. Wang and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.161202 66, 161202 (R) (2002).
14. M. Hakala, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.8155 61, 8155 (2000).
15. M. Fujii, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1779955 85, 1158 (2004).
16. D. V. Melnikov and J. R. Chelikowsky, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.113305 69, 113305 (2004).
17. S. Öǧüt, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.90.127401 90, 127401 (2003).
18. X. Landolt-Börstein, Numerical Data and Functional Relationships in Science and Technology (Springer-Verlag, Berlin, 1982), Vol. 17, Subvol. a.