Enhancement of luminescence in ion implanted Si quantum dots in SiO2 matrix by means of dose alignment and doping

Nanotechnology

Volumn 11, Issue 4, 2000, Pages 295-297

  Tetelbaum, D I ^a   Gorshkov, O N ^a   Trushun, S A ^a   Revin, D G ^b   Gaponova, D M ^b   Eckstein, W ^c  

^a Physico Technical Research Institute   (Russian Federation)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c MAX PLANCK INSTITUT FÜR PLASMAPHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSTRUCTURE; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

NANOINCLUSIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034497338     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/11/4/320     Document Type: Article

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