Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 222, Issue 3-4, 2004, Pages 497-504

  Kachurin, G A ^a   Cherkova, S G ^a   Volodin, V A ^a   Kesler, V G ^a   Gutakovsky, A K ^a   Cherkov, A G ^a   Bublikov, A V ^a   Tetelbaum, D I ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

Ion implantation; P doping; Radiation effects; Si nanocrystals

Indexed keywords

ANNEALING; CRYSTALLIZATION; HIGH RESOLUTION ELECTRON MICROSCOPY; ION BEAMS; ION IMPLANTATION; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RADIATION EFFECTS; RAMAN SPECTROSCOPY; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLIZATION TEMPERATURE; P DOPING; SI NANOCRYSTALS;

PHOSPHORUS;

EID: 3142663202     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.03.076     Document Type: Article

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