Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 23, 2007, Pages

  Xu, Qiang ^a   Luo, Jun Wei ^a   Li, Shu Shen ^a   Xia, Jian Bai ^a   Li, Jingbo ^b   Wei, Su Huai ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34347390654     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.235304     Document Type: Article

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