Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals

Semiconductors

Volumn 40, Issue 1, 2006, Pages 72-78

  Kachurin, G A ^a   Cherkova, S G ^a   Volodin, V A ^a   Marin, D M ^a   Tetel'baum, D I ^b   Becker, H ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^c LASER ZENTRUM HANNOVER E V   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33644664167     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782606010131     Document Type: Article

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