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1
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0027567665
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(b) L. Banyai and S. W. Koch, Semiconductor Quantum Dots(World Scientific, Singapore, 1993);
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(a) A. D. Yoffe, Adv. Phys. 42, 173 (1993);(b) L. Banyai and S. W. Koch, Semiconductor Quantum Dots(World Scientific, Singapore, 1993);
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Yoffe, A.D.1
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11
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4243571094
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Phys. Rev. Lett.(d) N. A. Hill and K. B. Whaley, 75, 1130 (1995).
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Hill, N.A.1
Whaley, K.B.2
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17
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0000053199
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). We demonstrate here that shape effects are quite small on Coulomb excitonic energies, even in the presence of sizable boundary dielectric mismatch.
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P. G. Bolcatto and C. R. Proetto, Phys. Rev. B 59, 12 487 (1999). We demonstrate here that shape effects are quite small on Coulomb excitonic energies, even in the presence of sizable boundary dielectric mismatch.
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(1999)
Phys. Rev. B
, vol.59
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Bolcatto, P.G.1
Proetto, C.R.2
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18
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85037874413
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In a forthcoming contribution we analyze the effects related to the boundary dielectric mismatch and finite confinement barriers. These so-called dielectric confinement effects are known to be important in semiconductor quantum dots. They are not needed for the comparison of our (unscreened) results with state-of-art (unscreened) calculations of Figs. 11 and 33. Inclusion of image charge effects within IEMA gives an upward shift of the full line in Fig. 22 of a few tens of meV (Formula presented) eV for (Formula presented) nm).
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In a forthcoming contribution we analyze the effects related to the boundary dielectric mismatch and finite confinement barriers. These so-called dielectric confinement effects are known to be important in semiconductor quantum dots. They are not needed for the comparison of our (unscreened) results with state-of-art (unscreened) calculations of Figs. 11 and 33. Inclusion of image charge effects within IEMA gives an upward shift of the full line in Fig. 22 of a few tens of meV (Formula presented) eV for (Formula presented) nm).
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19
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0009390584
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Al. L. Efros and A. L. Efros, Phys. Tek. Poluprovodn. 16, 1209 (1982) [Sov. Phys. Semicond. 16, 772 (1982)].
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Efros, A.L.1
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29
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85037906779
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As a (partial) validation of our single-band approach, we have obtained the value of (Formula presented), the exciton reduced mass of Eq. (3), by fitting the infinite barrier multiband calculation of the size-dependent one-particle band gap for Si spherical quantum dots of Ref. 5(a) to (Formula presented). Quite surprisingly, the fitting works nicely, producing (Formula presented) being the bare electron mass). This value of (Formula presented) is quite close to (Formula presented) used in our single-band approach.
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As a (partial) validation of our single-band approach, we have obtained the value of (Formula presented), the exciton reduced mass of Eq. (3), by fitting the infinite barrier multiband calculation of the size-dependent one-particle band gap for Si spherical quantum dots of Ref. 5(a) to (Formula presented). Quite surprisingly, the fitting works nicely, producing (Formula presented) being the bare electron mass). This value of (Formula presented) is quite close to (Formula presented) used in our single-band approach.
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