Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2

Journal of Applied Physics

Volumn 86, Issue 11, 1999, Pages 6128-6134

  Linnros, Jan ^a   Lalic, Nenad ^a   Galeckas, Augustinas ^a,b   Grivickas, Vytautas ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001628122     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371663     Document Type: Article

References (48)

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48. 2 matrix in proximity to a silicon layer.