Piezoresistivity characterization of synthetic silicon nanowires using a MEMS Device

Journal of Microelectromechanical Systems

Volumn 20, Issue 4, 2011, Pages 959-967

  Zhang, Yong ^a   Liu, Xinyu ^b   Ru, Changhai ^c   Zhang, Yan Liang ^a   Dong, Lixin ^d   Sun, Yu ^a,c  

^a UNIVERSITY OF TORONTO   (Canada)

^b MCGILL UNIVERSITY   (Canada)

^c SOOCHOW UNIVERSITY   (China)

^d Michigan State University   (United States)

Author keywords

Electrical characterization; mechanical characterization; microelectromechanical systems (MEMS) tensile testing; nanomanipulation; piezoresistivity characterization; scanning electron microscope (SEM); silicon nanowires

Indexed keywords

ELECTRICAL CHARACTERIZATION; MECHANICAL CHARACTERIZATIONS; MICROELECTROMECHANICAL SYSTEMS (MEMS) TENSILE TESTING; NANOMANIPULATIONS; PIEZORESISTIVITY; SCANNING ELECTRON MICROSCOPE (SEM); SILICON NANOWIRES;

ACTUATORS; CHARACTERIZATION; COMPOSITE MICROMECHANICS; ELECTRIC WIRE; ELECTRON BEAMS; ELECTRON MICROSCOPES; ELECTRONS; ELECTROSTATIC ACTUATORS; EQUIPMENT; IRRADIATION; MECHANICAL PROPERTIES; MECHATRONICS; MEMS; MICROELECTROMECHANICAL DEVICES; MICROMANIPULATORS; NANOTECHNOLOGY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; TENSILE TESTING;

ELECTRON DEVICE TESTING;

EID: 79961208410     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2011.2153825     Document Type: Article

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