Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation

Nano Letters

Volumn 11, Issue 2, 2011, Pages 548-555

  Bernal, Rodrigo A ^a   Agrawal, Ravi ^a   Peng, Bei ^a   Bertness, Kristine A ^b,c   Sanford, Norman A ^b   Davydov, Albert V ^b   Espinosa, Horacio D ^a  

^a Northwestern University   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

first principles calculations; Gallium nitride nanowires; in situ testing; molecular dynamics; nanowire elastic modulus; size effect; surface reconstruction

Indexed keywords

ATOMISTIC MODELING; ATOMISTIC SIMULATIONS; BULK VALUE; CRYSTALLOGRAPHIC ORIENTATIONS; ELASTIC PROPERTIES; FIRST-PRINCIPLES CALCULATION; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; GROWTH ORIENTATIONS; IN SITU TESTING; IN-SITU TEM; IN-SITU TRANSMISSION; NANOSCALE TESTING; SIZE DEPENDENCE; SIZE EFFECT; TENSILE TESTS;

DENSITY FUNCTIONAL THEORY; ELASTIC MODULI; ELASTICITY; GALLIUM ALLOYS; GALLIUM NITRIDE; IN SITU PROCESSING; MOLECULAR DYNAMICS; NANOWIRES; SURFACE TESTING; TENSILE TESTING; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE RECONSTRUCTION;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; TENSILE STRENGTH; ULTRASTRUCTURE; YOUNG MODULUS;

COMPUTER SIMULATION; CRYSTALLIZATION; ELASTIC MODULUS; GALLIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTIES; TENSILE STRENGTH;

EID: 79851475624     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl103450e     Document Type: Article

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