In situ electron microscopy mechanical testing of silicon nanowires using electrostatically actuated tensile stages

Journal of Microelectromechanical Systems

Volumn 19, Issue 3, 2010, Pages 663-674

  Zhang, Dongfeng ^a,b   Breguet, Jean Marc ^c   Clavel, Reymond ^a   Sivakov, Vladimir ^d   Christiansen, Silke ^d,e   Michler, Johann ^a  

^a EPFL   (Switzerland)

^b SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^c CSEM   (Switzerland)

^d LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^e MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

Author keywords

Capacitive sensor; Comb drive; Nanomechanics; Silicon nanowire (SiNW); Tensile test

Indexed keywords

BOTTOM-UP MANNER; BULK-MICROMACHINED; CAPACITIVE SENSOR; CLAMPED-CLAMPED BEAM; COMB DRIVE; COMB-DRIVE ACTUATOR; DIFFERENTIAL CAPACITIVE SENSORS; DRIVING FORCES; ELECTROLESS; FORCE SENSOR; FRACTURE STRENGTHS; HIGH ASPECT RATIO STRUCTURES; IN-SITU; IN-SITU ELECTRON MICROSCOPY; LONG AXIS; MECHANICAL CHARACTERIZATIONS; MICROFABRICATED; NANOMANIPULATIONS; PHOSPHORUS-DOPED; SILICON NANOWIRES; TENSILE FORCES; TENSILE TESTS; TOPDOWN; YOUNG'S MODULUS;

ACTUATORS; ASPECT RATIO; ELECTROSTATIC ACTUATORS; MECHANICAL ENGINEERING; NANOMECHANICS; NANOWIRES; PHOSPHORUS; POLYMER BLENDS; SCANNING ELECTRON MICROSCOPY; SENSORS; TENSILE STRENGTH;

TENSILE TESTING;

EID: 77953121403     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2010.2044746     Document Type: Article

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