A study on the modulation of the electrical transport by mechanical straining of individual titanium dioxide nanotube

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Asthana, A ^a   Shokuhfar, T ^a,b   Gao, Q ^a   Heiden, P ^b   Friedrich, C ^a,b   Yassar, R S ^a  

^a Michigan Technological University   (United States)

^b MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING DEFORMATIONS; CONDUCTION MODE; ELASTIC LIMIT; ELECTRICAL CONDUCTIVITY; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT PROPERTIES; ELECTRON-PHONON COUPLING EFFECTS; HIGH-RESOLUTION TEM; IN-SHELL; IN-SITU TRANSMISSION; MECHANICAL STRAINING; METAL SEMICONDUCTOR METAL; SEMICONDUCTING BEHAVIOR; TETRAGONAL STRUCTURE; TIO; TITANIUM DIOXIDE NANOTUBES;

BENDING (DEFORMATION); DIFFRACTION; ELECTRIC CONDUCTIVITY; HOLOGRAPHIC INTERFEROMETRY; IN SITU PROCESSING; NANOTUBES; PHONONS; SCANNING TUNNELING MICROSCOPY; TITANIUM; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77956018783     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3466663     Document Type: Article

References (26)

1. M. Adachi, Y. Murata, I. Okada, and S. Yoshikawa, J. Electrochem. Soc. JESOAN 0013-4651 150, G488 (2003). 10.1149/1.1589763
2. O. K. Varghese, D. Gong, M. Paulose, K. G. Paulose, and C. A. Grimes, Sens. Actuators B SABCEB 0925-4005 93, 338 (2003). 10.1016/S0925-4005(03)00222-3
3. G. Armstrong, A. R. Armstrong, P. G. Bruce, P. Reale, and B. Scrosati, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 18, 2597 (2006). 10.1002/adma.200601232
4. T. Umebayashi, T. Yamaki, H. Itoh, and K. Asai, J. Phys. Chem. Solids JPCSAW 0022-3697 2, 5320 (2002).
5. Y. H. Kim, K. J. Chang, and S. G. Louie, Phys. Rev. B PRBMDO 0163-1829 63, 205408 (2001). 10.1103/PhysRevB.63.205408
6. X. Bai, D. Goldberg, Y. Bando, C. Zhi, C. Tang, M. Mitome, and K. Kurashima, Nano Lett. NALEFD 1530-6984 7, 632 (2007). 10.1021/nl062540l
7. H. P. Maruska and A. K. Gosh, Sol. Energy SRENA4 0038-092X 20, 443 (1978). 10.1016/0038-092X(78)90061-0
8. Y. K. Lai, L. Sun, C. Chen, C. G. Nie, J. Zuo, and C. J. Lin, Appl. Surf. Sci. ASUSEE 0169-4332 252, 1101 (2005). 10.1016/j.apsusc.2005.02.035
9. M. Villafuerte, G. Juarez, S. P. de Heluani, and D. Comedi, Physica B PHYBE3 0921-4526 398, 321 (2007). 10.1016/j.physb.2007.04.035
10. J. M. Macak, H. Tsuchiya, S. Berger, S. Bauer, S. Fujimoto, and P. Schmuki, Chem. Phys. Lett. CHPLBC 0009-2614 428, 421 (2006). 10.1016/j.cplett.2006.07.062
11. G. F. Ortiz, I. Hanzu, P. Knauth, P. Lavela, J. L. Tirado, and T. Djenizian, Electrochim. Acta ELCAAV 0013-4686 54, 4262 (2009). 10.1016/j.electacta.2009.02.085
12. F. A. Padovani and R. Stratton, Solid-State Electron. SSELA5 0038-1101 9, 695 (1966). 10.1016/0038-1101(66)90097-9
13. Z. Y. Zhang, C. H. Jin, X. L. Liang, Q. Chen, and L. -M. Peng, Appl. Phys. Lett. APPLAB 0003-6951 88, 073102 (2006). 10.1063/1.2177362
14. M. Stamate, G. Lazar, and I. Lazar, Rom. J. Phys. RJPHEC 1221-146X 53, 217 (2008).
15. H. Tang, K. Prasad, R. Sanjines, P. E. Schmidt, and F. Levy, J. Appl. Phys. JAPIAU 0021-8979 75, 2042 (1994). 10.1063/1.356306
16. E. Hendry, F. Wang, J. Shan, T. F. Heinz, and M. Bonn, Phys. Rev. B PLRBAQ 0556-2805 69, 081101 (2004). 10.1103/PhysRevB.69.081101
17. E. Yagi, R. R. Hasiguti, and M. Aono, Phys. Rev. B PLRBAQ 0556-2805 54, 7945 (1996). 10.1103/PhysRevB.54.7945
18. G. A. Acket and J. Volger, Physica (Amsterdam) PHYSAG 0031-8914 30, 1667 (1964). 10.1016/0031-8914(64)90192-2
19. V. N. Bogomolov and V. P. Zhuze, Sov. Phys. Solid State SPSSA7 0038-5654 5, 2404 (1964).
20. H. Y. Peng, M. D. McCluskey, Y. M. Gupta, M. A. Kneissl, and N. M. Johnson, Phys. Rev. B PRBMDO 0163-1829 71, 115207 (2005). 10.1103/PhysRevB.71. 115207
21. K. Nishidate and M. Hasegawa, Phys. Rev. B PLRBAQ 0556-2805 78, 195403 (2008). 10.1103/PhysRevB.78.195403
22. S. D. Mahanti, K. Hoang, and S. Ahmad, Physica B PHYBE3 0921-4526 401, 291 (2007). 10.1016/j.physb.2007.08.169
23. J. Robertson, O. Sharia, and A. A. Demkov, Appl. Phys. Lett. APPLAB 0003-6951 91, 132912 (2007). 10.1063/1.2790479
24. M. Huang, P. Rugheimer, M. G. Lagally, and F. Liu, Phys. Rev. B PLRBAQ 0556-2805 72, 085450 (2005). 10.1103/PhysRevB.72.085450
25. M. S. Arnold, P. Avouris, Z. W. Pan, and Z. L. Wang, J. Phys. Chem. B JPCBFK 1089-5647 107, 659 (2003). 10.1021/jp0271054
26. X. Lin, X. B. He, T. Z. Yang, W. Gao, D. X. Shi, H. -J. Gao, D. D. D. Ma, T. S. Lee, F. Liu, and X. C. Xie, Appl. Phys. Lett. APPLAB 0003-6951 89, 043103 (2006). 10.1063/1.2234293