Piezoresistive InGaAs/GaAs nanosprings with metal connectors

Nano Letters

Volumn 9, Issue 2, 2009, Pages 554-561

  Hwang, Gilgueng ^a   Hashimoto, Hideki ^a   Bell, Dominik J ^b   Dong, Lixin ^b   Nelson, Bradley J ^b   Schön, Silke ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

BI-LAYER; FABRICATION PROCESS; FLEXIBLE LAYER; INGAAS/GAAS; MICRO-FABRICATION TECHNIQUES; NANOSPRINGS; PIEZO-RESISTIVE; THIN LAYERS; THREE-DIMENSIONAL STRUCTURE; WET-ETCH;

ELECTRODES;

EID: 65249150163     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl8026718     Document Type: Article

References (36)

1. Motojima. S.; Kawaguchi. M.; Nozaki. K.; Iwanaga, H. Appl. Phys, Lett. 1990, 56 (4), 321-323.
2. Zhang, X. B.; Zhang, X. F.; Bernaerts, D.; Vantendeloo, G. T.; Amelinckx, S.; Vanlanduyt, J.; Ivanov, V.; Nagy, J. B.; Lambin, P.; Lucas, A. A. Europhys. Lett. 1994, 27 (2), 141-146.
3. Gao, P. M.; Ding, Y.; Mai, W. J.; Hughes, W. L.; Lao, C. S.; Wang, Z. L. Science 2005, 309 (5741), 1700-1704.
4. Kong, X. Y.; Wang, Z. L. Nano Lett. 2003, 3 (12), 1625-1631.
5. Chen, X. Q.; Zhang, S. L.; Dikin, D. A.; Ding, W. Q.; Ruoff, R. S.; Pan, L. J.; Nakayama, Y. Nano Lett. 2003, 3 (9), 1299-1304.
6. Kaneto, K.; Tsumta, M.; Motojima, S. Synth. Met. 1999, 103 (1-3), 2578-2579.
7. Prinz, V. Y.; Seleznev, V. A.; Gutakovsky, A. K.; Chekhovsky, A. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Gavrilova, T. A. Physica E 2000, 6, 828-831.
8. Prinz, A. V.; Prinz, V. Y.; Seleznev, V. A. Microelectron. Eng. 2003, 67-8., 782-788.
9. Zhang, L.; Deckhardt, E.; Weber, A.; Schoenenberger, C; Griitzma-cher, D. Nanotechnology 2005, 16, 655-663.
10. Schmidt, O. G.; Deneke, C; Schmarje, N.; Miifier, C; Jin-Phillipp, N. Y. Mater. Set Eng., C 2002, 19, 393-396.
11. Prinz, V. Y.; Chekhovsky, A. V.; Preobrazhenskii, V. V.; Semyagin, B. R.; Gutakovsky, A. K. Nanotechnology 2002, 13, 231-233.
12. Vorobev, A. B.; Prinz, V. Y. Semicond. Sci. Technol. 2002, 17, 614-616.
13. Bell, D. J.; Sun, Y.; Zhang, L.; Dong, L. X.; Nelson, B. J.; Gruetzmacher, D. Sens. Actuators, A 2006, 130-131, 54-61.
14. Bell, D. J.; Dong, L. X.; Nelson, B. J.; Golling, M.; Zhang, L.; Gmtzmacher, D. Nano Lett. 2006, 6 (4), 725-729.
15. Gao, P. X.; Mai, W.; Wang, Z. L. Nano Lett. 2006, 6 (11), 2536-2543.
16. Han, X. D.; Zhang, Z.; Wang, Z. L. NANO 2007, 2 (5), 249-271.
17. Poncharal, P.; Wang, Z. L.; Ugarte, D.; Heer, W. D. Science 1999, 283, 1513-1516.
18. Niyogi, S.; Hangarter, C; Thamankar, R. M.; Chiang, Y.; Kawakami, R.; Myung, N. V.; Haddon, R. C. J. Phys. Chem. 2004, 108, 19814-19824.
19. Bendey, A. K.; Trethewey, J. S.; Ellis, A. B.; Crone, W. C. Nano Lett. 2004, 4, 487-190.
20. Hwang, G.; Hashimoto, H. IEEE Trans. Control Syst. Technol. 2007, 15, 960-966.
21. Pruitt. B. L.: Park, W. T.; Kennv, T. W. J. Microelectromech. Syst. 2004, 13 (2), 220-229.
22. He, R.; Yang, P. D. Nature 2006, 1, 42-16.
23. Torivama, T.; Funai, D.; Sugiyama, S. J-Appl. Phys. 2003, 93 (1), 561-565.
24. Sasaki, A. J. Cryst. Growth 1996, 160 (1-2), 27-35.
25. Tanner, B. K.; Parbrook, P. J.; Whitehouse, C. R.; Keir, A. M.; Johnson, A. D.; Jones, J.; Wallis, D.; Smith, L. M.; Lunn, B.; Hogg, J. H. C. Appl. Phys. Lett. 2000, 77 (14), 2156-2158.
26. Torkhov, N. A. Semiconductors 2003, 37 (10), 1177-1184.
27. Nakajima, K. Jgn. /. Appl. Phys., Part I 1999, 38 (4A), 1875-1883.
28. Molhave, K.; Madsen, D. N.; Dohn, S.; Boggild, P. Nanotechnology 2004, 15 (8), 1047-1053.
29. Dong, L. X.; Aral, R; Fukuda, T. A-pl. Phys. Lett. 2002, 81 (10), 1919-1921.
30. Hjort, K.; Soderkvist, J.; Schweitz, J. A. JL Micromech. Microeng. 1994, 4 (1), 1-13.
31. Chen, X.; Zhang, X.; Dikin. D. A.; Ding. W.; Ruoff, L.; Pan. L.; Nakayama, Y. Nano Lett. 2003, 3 (9), 1299-1304.
32. Kanda, Y. IEEE Trans. Electron Devices 1982, 29, 64-70.
33. Harley, J. A.; Kenny, T. W. Appl. Phys. Lett. 1999, 75, 289-291.
34. Tabib-Azar, M.; Wang, R.; Xie, Y.; You, L. In Proceedings of the 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems 2006, 1297-1302.
35. Voncken, M. M. A. J.; Schermer, J. J.; Bauhuis, G. J.; Mulder, P.; Larsen, P. K. Appl. Phys. A: Mater. Sci. Process. 2004, 79 (7), 1801-1807.
36. Schroder, D. K. Semiconductor Material and Device Characterization; John Wiley & Sons Inc.: New York, 2006.