Electrically controlled giant piezoresistance in silicon nanowires

Nano Letters

Volumn 10, Issue 4, 2010, Pages 1248-1252

  Neuzil, Pavel ^a   Wong, Chee Chung ^a,b   Reboud, Julien ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Electromechanical property; Giant piezoresistivity; Silicon nanowires

Indexed keywords

BULK VALUE; DISCRETE MODE; ELECTRICAL BIAS; ELECTRICAL CURRENT; ELECTROMECHANICAL PROPERTY; GAUGE FACTORS; HIGHLY SENSITIVE; MECHANICAL SENSORS; MECHANICAL STRESS; NANOELECTROMECHANICAL SWITCHES; ORDERS OF MAGNITUDE; P-TYPE; PARTIALLY DEPLETED; PIEZORESISTANCE; PIEZORESISTIVITY; PINCH-OFF REGION; POSITIVE BIAS; SILICON NANOWIRES; TOTAL CURRENT;

ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; NANOWIRES; STRESSES;

ELECTRIC WIRE;

NANOWIRE; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRICITY; EQUIPMENT DESIGN; IMPEDANCE; INSTRUMENTATION; NANOTECHNOLOGY;

ELECTRIC IMPEDANCE; ELECTRIC WIRING; EQUIPMENT DESIGN; NANOTECHNOLOGY; NANOWIRES; SILICON DIOXIDE;

EID: 77951034966     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl9037856     Document Type: Article

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