Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD

Journal of Materials Science

Volumn 46, Issue 6, 2011, Pages 1606-1612

  Corekci S ^a   Ozturk M K ^b   Bengi, A ^b   Cakmak M ^b   Ozcelik S ^b   Ozbay E ^c  

^a KIRKLARELI UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY FLAT SURFACE; CRYSTAL QUALITIES; DARK SPOTS; DISLOCATION DENSITIES; GAN LAYERS; HIGH-RESOLUTION X-RAY DIFFRACTION; MOSAIC CRYSTAL MODEL; OPTICAL QUALITIES; PHOTOLUMINESCENCE MEASUREMENTS; ROOT MEAN SQUARE ROUGHNESS; SAPPHIRE SUBSTRATES; SCAN AREA; SMOOTH SURFACE; STRUCTURAL AND MORPHOLOGICAL PROPERTIES;

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; CRYSTAL ATOMIC STRUCTURE; EDGE DISLOCATIONS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; SAPPHIRE; SCREW DISLOCATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 79960837303     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-010-4973-7     Document Type: Article

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