Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 89, Issue 9, 2006, Pages

  Wang, H ^a   Huang, Y ^a   Sun, Q ^a   Chen, J ^a   Wang, L L ^a   Zhu, J J ^a   Zhao, D G ^a   Zhang, S M ^a   Jiang, D S ^a   Wang, Y T ^a   Yang, H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL RESOLVING POWER; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

HIGH-RESOLUTION X-RAY DIFFRACTION; INN FILMS; INN/GAN SYSTEM; MOSAIC TILT;

GALLIUM NITRIDE;

EID: 33748276909     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345224     Document Type: Article

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