(0 0 0 1) Oriented GaN epilayer grown on (1 1 2̄ 0) sapphire by MOCVD

Journal of Crystal Growth

Volumn 231, Issue 1-2, 2001, Pages 41-47

  Bai, J ^a   Wang, T ^b   Li, H D ^a   Jiang, N ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Nitride Photonic Semiconductor   (Japan)

Author keywords

A1. X ray diffraction; B1. Nitrides; B1. Sapphire; B2. Semiconducting gallium compounds

Indexed keywords

COMPRESSIVE STRESS; GALLIUM NITRIDE; LASER APPLICATIONS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

EPILAYERS;

EPITAXIAL GROWTH;

EID: 0035452467     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01443-9     Document Type: Article

References (19)

1. Jinwei Yang