Surface and interface characterization of GaN/AlGaN high electron mobility transistor structures by x-ray and atomic force microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1234-1237

  Torabi, A ^a   Ericson, P ^a   Yarranton, E J ^a   Hoke, W E ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CHARACTERIZATION; ELECTRIC PROPERTIES; ELECTRON GAS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; SURFACE PHENOMENA; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

INTERFACE CHARACTERIZATION; SURFACE CHARACTERIZATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035998567     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1481874     Document Type: Conference Paper

References (10)