Structural and optical characterization of GaN heteroepitaxial films on SiC substrates

Applied Surface Science

Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 232-235

  Morse, M ^a,b   Wu, P ^a,b   Choi, S ^a,b   Kim, T H ^a,b   Brown, A S ^a,b   Losurdo, M ^c   Bruno, G ^c  

^a Duke University   (United States)

^b DUKE UNIVERSITY   (United States)

^c CNR   (Italy)

Author keywords

GaN epitaxial layer; Nitridation; SiC substrate

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; NUCLEATION; OPTICAL PROPERTIES; SILICON CARBIDE; X RAY DIFFRACTION;

DISLOCATION DENSITY; GAN EPITAXIAL LAYER; HETEROEPITAXY; SIC SUBSTRATE;

THIN FILMS;

EID: 33750515039     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.05.097     Document Type: Article

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