Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 349-353

  Okada, N ^a   Kato, N ^a   Sato, S ^a   Sumii, T ^a   Nagai, T ^a   Fujimoto, N ^a   Imura, M ^a   Balakrishnan, K ^a   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a   Maruyama, H ^b   Takagi, T ^b   Noro, T ^b   Bandoh, A ^c  

^a MEIJO UNIVERSITY   (Japan)

^b IBIDEN CO LTD   (Japan)

^c Showa Denko Materials Co   (Japan)

Author keywords

A1. Growth models; B1. AlN; B1. Buffer layer; B1. Nitrides; B2. Organometallic vapor phase epitaxy.

Indexed keywords

ALUMINUM NITRIDE; CHEMICAL MODIFICATION; CRACKS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; SUBSTRATES;

BUFFER LAYERS; CRYSTALLINE QUALITY; GROWTH MODELS; MULTI-GROWTH MODE MODIFICATION;

FILM GROWTH;

EID: 33846463072     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.123     Document Type: Article

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