The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 6, 2009, Pages 1487-1492

  Wong, Yuen Yee ^a   Chang, Edward Yi ^a   Yang, Tsung Hsi ^a   Chang, Jet Rung ^a   Chen, Yi Cheng ^a   Ku, Jui Tai ^a   Lee, Ching Ting ^b   Chang, Chun Wei ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

A1. Defects; A1. High resolution X ray diffraction; A3. Molecular beam epitaxy; B1. Gallium nitride

Indexed keywords

ALUMINA; ALUMINUM NITRIDE; CORUNDUM; CRYSTAL GROWTH; DEFECT STRUCTURES; DEFECTS; DIFFRACTION; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; PLASMA DIAGNOSTICS; PLASMAS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SURFACE ROUGHNESS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

A1. DEFECTS; A1. HIGH-RESOLUTION X-RAY DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; ALN; ALN BUFFERS; B1. GALLIUM NITRIDE; GAN FILMS; PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIES; ROCKING CURVES; THREADING DISLOCATIONS;

MOLECULAR BEAMS;

EID: 62549139220     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.051     Document Type: Article

References (31)

1. Corrion A., Poblenz C., Waltereit P., Palacios T., Rajan S., Mishra U.K., and Speck J.S. IEICE Trans. Electron. E89-C (2006) 906
2. Manfra M.J., Weimann N.G., Hsu J.W.P., Pfeiffer L.N., West K.W., and Chu S.N.G. Appl. Phys. Lett. 81 (2002) 1456
3. Li L.K., Turk B., Wang W.I., Syed S., Simonian D., and Stormer H.L. Appl. Phys. Lett. 76 (2000) 742
4. Ambacher O., Smart J., Shealy J.R., Weimann N.G., Chu K., Murphy M., Schaff W.J., Eastman L.F., Dimitrov R., Wittmer L., Stutzmann M., Rieger W., and Hilsenbeck J. J. Appl. Phys. 85 (1998) 3222
5. Sumiya M., and Fuke S. MRS Internet J. Nitride Semicond. Res. 9 (2004) 1
6. Shen X.Q., Matsuhata H., and Okumura H. Appl. Phys. Lett. 86 (2005) 021912
7. Pan Y.B., Yang Z.J., Chen Z.T., Lu Y., Yu T.J., Hu X.D., Xu K., and Zhang G.Y. J. Crystal Growth 286 (2006) 255
8. Tarsa E.J., Heying B., Wu X.H., Fini P., DenBaars S.P., and Speck J.S. Appl. Phys. Lett. 82 (1997) 5472
9. Zhou L., Smith D.J., Storm D.F., Katzer D.S., Binari S.C., and Shanabrook B.V. Appl. Phys. Lett. 88 (2006) 011916
10. Lee C.D., Sagar A., Feenstra R.M., Inoki C.K., Kuan T.S., Sarney W.L., and Salamance-Riba L. Appl. Phys. Lett. 79 (2001) 3428
11. Oliver R.A., Kappers M.J., and Humphreys C.J. Appl. Phys. Lett. 89 (2006) 011914
12. Hino T., Tomiya S., Miyajima T., Yanashima K., Hashimoto S., and Ikeda M. Appl. Phys. Lett. 76 (2000) 3421
13. Zhang J.C., Zhao D.G., Wang J.F., Wang Y.T., Chen J., Liu J.P., and Yang H. J. Crystal Growth 268 (2004) 24
14. Kapolnek D., Wu X.H., Heying B., Keller S., Keller B.P., Mishra U.K., DenBaars S.P., and Speck J.S. Appl. Phys. Lett. 67 (1995) 1541
15. Shim B., Okita H., Jeganathan K., Shimizu M., and Okumura H. Jpn. J. Appl. Phys. 42 (2003) 2265
16. Romanov A.E., Fini P., and Speck J.S. J. Appl. Phys. 93 (2003) 106
17. Shen X.Q., Kuruta F., Nakamura N., Matsuhata H., Shimizu M., and Okumura H. J. Crystal Growth 301-302 (2007) 404
18. Skierbiszewski C., Dybko K., Knap W., Siekacz M., Krupczyński W., Nowak G., Boćkowski M., Łusakowski J., Wasilewski Z.R., Maude D., Suski T., and Porowski S. Appl. Phys. Lett. 86 (2005) 102106
19. Manfra M.J., Baldwin K.W., Sergent A.M., Molnar R.J., and Caissie J. Appl. Phys. Lett. 85 (2004) 1722
20. Smith A.R., Feenstra R.M., Greve D.W., Shin M.-S., Skowronski M., Neugebauer J., and Northrup J.E. Appl. Phys. Lett. 72 (1998) 2114
21. Koblmueller G., Averbeck R., Geelhaar L., Riechert H., Hösler W., and Pongratz P. J. Appl. Phys. 93 (2003) 9591
22. Heying B., Wu X.H., Keller S., Li Y., Kapolnek D., Keller B.P., DenBaars S.P., and Speck J.S. Appl. Phys. Lett. 68 (1995) 643
23. Gay P., Hirsch P.B., and Kelly A. Acta Metall. 1 (1953) 315
24. Harutyunyan V.S., Aivazyan A.P., Weber E.R., Kim Y., Park Y., and Subramanya S.G. J. Phys. D: Appl. Phys. 34 (2001) A35
25. Shen X.Q., Shimizu M., and Qkumura H. Jpn. J. Appl. Lett. 42 (2003) L1293
26. Trampert A., Brandt O., and Ploog K.H. Crystal structure of group III nitrides. In: Pankove J.I., and Moustakas T.D. (Eds). Gallium Nitride (GaN) I (1999), Academic Press, New York 167-192
27. Keckes J., Koblmueller G., and Averbeck R. J. Crystal Growth 246 (2002) 73
28. Sugiura L. J. Appl. Phys. 81 (1997) 1633
29. Kim Y., Subramanya S.G., Siegle H., Krüger J., Perlin P., Weber E.R., Ruvimov S., and Liliental-Weber Z. J. Appl. Phys. 88 (2000) 6032
30. Cantu P., Wu F., Waltereit P., Keller S., Romanov A.E., Mishra U.K., DenBaars S.P., and Speck J.S. Appl. Phys. Lett. 83 (2003) 674
31. Waltereit P., Poblenz C., Rajan S., Wu F., Mishra U.K., and Speck J.S. Jpn. J. Appl. Phys. 43 (2004) L1520