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Volumn 87, Issue 24, 2005, Pages 1-3

Reduction of threading dislocations in AlGaN layers grown on AlNsapphire templates using high-temperature GaN interlayer

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REDUCTION;

EID: 28844487005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2143126     Document Type: Article
Times cited : (35)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.