Observation of growth modes during metal-organic chemical vapor deposition of GaN

Applied Physics Letters

Volumn 74, Issue 22, 1999, Pages 3326-3328

  Stephenson, G B ^a   Eastman, J A ^a   Thompson, C ^a,c   Auciello, O ^a   Thompson, L J ^a   Munkholm, A ^a   Fini, P ^b   DenBaars, S P ^b   Speck, J S ^b  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b University of California   (United States)

^c NORTHERN ILLINOIS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; THERMAL EFFECTS; X RAY ANALYSIS; X RAY SCATTERING;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032621984     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123333     Document Type: Article

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