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Volumn 282, Issue 3-4, 2005, Pages 290-296

A study of dislocations in AlN and GaN films grown on sapphire substrates

Author keywords

A1. Line defects; A1. Transmission electron microscopy; A3. Low pressure metalorganic chemical vapor phase epitaxy; B1. Nitrides

Indexed keywords

CURRENT DENSITY; FILM GROWTH; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

EID: 23144462707     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.05.023     Document Type: Article
Times cited : (80)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.