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Volumn 282, Issue 3-4, 2005, Pages 290-296
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A study of dislocations in AlN and GaN films grown on sapphire substrates
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Author keywords
A1. Line defects; A1. Transmission electron microscopy; A3. Low pressure metalorganic chemical vapor phase epitaxy; B1. Nitrides
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Indexed keywords
CURRENT DENSITY;
FILM GROWTH;
GALLIUM NITRIDE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR LASERS;
TRANSMISSION ELECTRON MICROSCOPY;
VAPOR PHASE EPITAXY;
X RAY DIFFRACTION;
LINE DEFECTS;
LOW PRESSURE METALORGANIC CHEMICAL VAPOR PHASE EPITAXY;
SCREW DISLOCATIONS;
THREADING DISLOCATIONS (TD);
DISLOCATIONS (CRYSTALS);
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EID: 23144462707
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.05.023 Document Type: Article |
Times cited : (80)
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References (15)
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