High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer

Journal of Non-Crystalline Solids

Volumn 352, Issue 23-25, 2006, Pages 2332-2334

  Poti B ^a   Tagliente, M A ^b   Passaseo, A ^a  

^a NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^b Centro Ricerche Brindisi   (Italy)

Author keywords

Atomic force and scanning tunneling microscopy; Chemical vapor deposition; Crystal growth; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; SAPPHIRE; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION;

AL2O3; FULL WIDTH AT HALF MAXIMUM (FWHM); HT-ALN BUFFER LAYER; SAPPHIRE SUBSTRATES;

GALLIUM NITRIDE;

EID: 33745388027     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.01.099     Document Type: Article

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