Relationship between structure characteristic and blue luminescence in unintentional doped GaN layers

Materials Science and Engineering: B

Volumn 122, Issue 1, 2005, Pages 72-75

  Li, Shuti ^a   Jiang, Fengyi ^b   Han, Guangfan ^a   Wang, Li ^b   Xiong, Chuanbing ^b   Peng, Xuexin ^b   Mo, Hunlan ^b  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b NANCHANG UNIVERSITY   (China)

Author keywords

Double crystal X ray diffraction; GaN; Photoluminescence; Rutherford backscattering channeling

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BAND EMISSION; BUFFER LAYER; DOUBLE CRYSTAL X-RAY DIFFRACTION; RUTHERFORD BACKSCATTERING/CHANNELING;

GALLIUM NITRIDE;

EID: 21744442068     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.02.067     Document Type: Article

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